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TSM2N7000CT

60V N-Channel MOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

TSM2N7000CTA3

60V N-Channel Enhancement Mode MOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

TSM2N7000CTB0

60V N-Channel Enhancement Mode MOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

2N7000

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

■DESCRIPTION TheUTC2N7000hasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7000

N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET

Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

2N7000

N-ChannelEnhancementModePowerMos.FET

FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATIONS ●Loadswitchforportabledevices ●DC/DCconverter

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2N7000

TECHNICALSPECIFICATIONSOFN-CHANNELSMALLSIGNALMOSFET

Description Designedforlowvoltageandlowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplications.

DCCOM

Dc Components

2N7000

N-channel60V-1.8廓-0.35A-SOT23-3L/TO-92STripFET??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

2N7000

N-ChannelEnhancement-ModeVerticalDMOSFETs

SUTEX

Supertex, Inc

2N7000

N-CHANNEL-ENHANCEMENT

TRSYS

Transys Electronics

2N7000

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

2N7000

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertex2N7000isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

2N7000

CASE29-04,STYLE22TO-92(TO-226AA)

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

2N7000

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N?ChannelTO?92 Features ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N7000

N-ChannelEnhancementModeFieldEffectTransistor

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

2N7000

LogicN-ChannelMOSFET

GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max5?)@VGS=10V RDS(on)(Max5.3?)@VGS=4.5V ■GateCharge(Typical

semiWell

SemiWell Semiconductor

2N7000

DMOSTransistors(N-Channel)

GE

GE Industrial Company

2N7000

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7000

FIELDEFFECTTRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapability.

KECKEC CORPORATION

KEC株式會社

2N7000

SmallSignalMOSFETN-Channel

Features: *LowOn-Resistance:5Ω *LowInputCapacitance:60PF *LowOutputCapacitance:25PF *LowThreshole:1.4V(TYE) *FastSwitchingSpeed:10ns

WEITRON

Weitron Technology

詳細參數(shù)

  • 型號:

    TSM2N7000CT

  • 功能描述:

    MOSFET 60V 0.2A 0.35W

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
TS
24+
TO-92
2000
詢價
TS
2023+
TO-92
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
TSC
23+
TO-92
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
TAIWAN SEMICONDUCTOR
23+
TO-92
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
TSC
18+
TO-92
1955
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
TSC
TO-92
893993
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
TSC
23+
TO-92
4455
原廠原裝正品
詢價
TAIWAN SEMONDUCTOR
23+
NA/
5205
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
詢價
TSC
24+
TO-92
56000
公司進口原裝現(xiàn)貨 批量特價支持
詢價
TSM
1535+
211
詢價
更多TSM2N7000CT供應(yīng)商 更新時間2024-12-21 16:00:00