首頁 >TSM2N7000CT>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
TSM2N7000CT | 60V N-Channel MOSFET | TSCTaiwan Semiconductor Company, Ltd 臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司 | TSC | |
60V N-Channel Enhancement Mode MOSFET | TSCTaiwan Semiconductor Company, Ltd 臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司 | TSC | ||
60V N-Channel Enhancement Mode MOSFET | TSCTaiwan Semiconductor Company, Ltd 臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司 | TSC | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR ■DESCRIPTION TheUTC2N7000hasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage, | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-ChannelEnhancementModePowerMos.FET FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATIONS ●Loadswitchforportabledevices ●DC/DCconverter | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
TECHNICALSPECIFICATIONSOFN-CHANNELSMALLSIGNALMOSFET Description Designedforlowvoltageandlowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplications. | DCCOM Dc Components | DCCOM | ||
N-channel60V-1.8廓-0.35A-SOT23-3L/TO-92STripFET??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs | SUTEX Supertex, Inc | SUTEX | ||
N-CHANNEL-ENHANCEMENT | TRSYS Transys Electronics | TRSYS | ||
N-Channel60-V(D-S)MOSFET FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheSupertex2N7000isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh | SUTEX Supertex, Inc | SUTEX | ||
CASE29-04,STYLE22TO-92(TO-226AA)
| MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92 SmallSignalMOSFET200mAmps,60Volts N?ChannelTO?92 Features ?Pb?FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor | NSCNational Semiconductor (TI) 美國國家半導(dǎo)體美國國家半導(dǎo)體公司 | NSC | ||
LogicN-ChannelMOSFET GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max5?)@VGS=10V RDS(on)(Max5.3?)@VGS=4.5V ■GateCharge(Typical | semiWell SemiWell Semiconductor | semiWell | ||
DMOSTransistors(N-Channel) | GE GE Industrial Company | GE | ||
N-ChannelEnhancementModeFieldEffectTransistor Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
FIELDEFFECTTRANSISTOR INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapability. | KECKEC CORPORATION KEC株式會社 | KEC | ||
SmallSignalMOSFETN-Channel Features: *LowOn-Resistance:5Ω *LowInputCapacitance:60PF *LowOutputCapacitance:25PF *LowThreshole:1.4V(TYE) *FastSwitchingSpeed:10ns | WEITRON Weitron Technology | WEITRON |
詳細參數(shù)
- 型號:
TSM2N7000CT
- 功能描述:
MOSFET 60V 0.2A 0.35W
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TS |
24+ |
TO-92 |
2000 |
詢價 | |||
TS |
2023+ |
TO-92 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
TSC |
23+ |
TO-92 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
TAIWAN SEMICONDUCTOR |
23+ |
TO-92 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
TSC |
18+ |
TO-92 |
1955 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
TSC |
TO-92 |
893993 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
TSC |
23+ |
TO-92 |
4455 |
原廠原裝正品 |
詢價 | ||
TAIWAN SEMONDUCTOR |
23+ |
NA/ |
5205 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
TSC |
24+ |
TO-92 |
56000 |
公司進口原裝現(xiàn)貨 批量特價支持 |
詢價 | ||
TSM |
1535+ |
211 |
詢價 |
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