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ADM150N10G

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM150N10GseriesMOSFETsisanewtechnology,whichcombinesaninnovativesuperjunc

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛(ài)德微愛(ài)德微(深圳)電子有限公司

FDB150N10

N-ChannelPowerTrench?MOSFET100V,57A,15m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB150N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=57A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDI150N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=57A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDI150N10

N-ChannelPowerTrench?MOSFET100V,57A,16m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP150N10

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDP150N10

N-ChannelPowerTrench?MOSFET100V,57A,15m廓

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?RDS(on)=12m?(Typ.)@VGS=10V,ID=49A ?Fa

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP150N10A

N-ChannelPowerTrench?MOSFET100V,50A,15m廓

Description ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeentailoredtominimizetheon-stateresistancewhilemaintainingsuperiorswitchingperformance. Features ?RDS(on)=12.5mΩ(Typ.)@VGS=10V,ID=50A ?FastSwitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP150N10A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=50A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FIR150N10PG

N-ChannelSuperTrenchPowerMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

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更多TT150N10KOF供應(yīng)商 更新時(shí)間2025-2-13 14:14:00

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