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IXFK180N15P

PolarHiPerFETPowerMOSFET

Polar?HiPerFETPowerMOSFET N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?H

IXYS

IXYS Corporation

IXFN180N15P

PolarHTHiPerFETPowerMOSFET

PolarHT?HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackage ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?Fastrecoverydiode ?UnclampedInducti

IXYS

IXYS Corporation

IXFN180N15P

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=150A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V APPLICATIONS ·Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR180N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR180N15P

PolarHVHiPerFETPowerMOSFETISOPLUS247

PolarHV?HiPerFETPowerMOSFETISOPLUS247?(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardisolatedpackage ?ULrecognizedpackage ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipa

IXYS

IXYS Corporation

IXFX180N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=180A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX180N15P

PolarHiPerFETPowerMOSFET

Polar?HiPerFETPowerMOSFET N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?H

IXYS

IXYS Corporation

IXTK180N15

HighCurrentMegaMOSTMFET

Features ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Internationalstandardpackage ?Fastswitchingtimes Applications ?Motorcontrols ?DCchoppers ?Switched-modepowersupplies Advantages ?Easytomountwithonescrew (isolatedmountingscrewhole)

IXYS

IXYS Corporation

IXTK180N15

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTK180N15P

PolarHTTMPowerMOSFETN-ChannelEnhancementMode

Features ●Internationalstandardpackage ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXTK180N15P

N-ChannelEnhancementModePowerMOSFET

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    TT180N15KOF

  • 功能描述：

    Power Module

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更多TT180N15KOF供應(yīng)商 更新時(shí)間2024-11-15 11:14:00

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