首頁 >TUSB1210RHBR>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
VARISTORS(MultilayerCeramicTransientVoltageSuppressorStandardCapacity) | DBLECTRODB Lectro Inc 迪貝電子 | DBLECTRO | ||
AgilentU1210SeriesHandheldClampMeters | HPAgilent(Hewlett-Packard) 安捷倫科技安捷倫科技有限公司 | HP | ||
HandheldClampMeters | KEYSIGHTKeysight Technologies 是德科技是德科技(中國(guó))有限公司 | KEYSIGHT | ||
ULTRAFASTRECOVERYRECTIFIERS UltraFastRecoveryRectifiers ?UltraFastRecoveryRectifier ?175°CJunctionTemperature ?VRRM100to200Volts ?2x6Ampcurrentrating ?trr30nsecmaximum | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
100mW-1200VSiCCascode | UNITEDSIC UnitedSiC. | UNITEDSIC | ||
SurfaceMount2-ElectrodeGasDischargeTube | UNSEMIUN Semiconducctor INC 優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司 | UNSEMI | ||
SiliconNPNepitaxialplanertransistor SiliconNPNepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Mtypepackageallowingeasyautomaticandmanualinsertionas wellasstand-alonefixingtotheprintedcircuitboard | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
SiliconNPNepitaxialplanertransistor SiliconNPNepitaxialplanertransistor Forswitching/digitalcircuits ■Features ●Twoelementsincorporatedintoonepackage. (Transistorswithbuilt-inresistor) ●Reductionofthemountingareaandassemblycostbyonehalf. ■BasicPartNumberofElement ●UNR1210(UN1210)×2elemen | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
SiliconNPNepitaxialplanartype SiliconNPNepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Mtypepackageallowingeasyautomaticandmanualinsertionas wellasstand-alonefixingtotheprintedcircuitboard | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
SurfaceSingleGasDischargeTube Features Non-Radioactive ROHScompliant Ultralowcapacitance( | UNSEMIUN Semiconducctor INC 優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司 | UNSEMI | ||
MULTILAYERCHIPVARISTORS Feature VaristorVoltagefrom12Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection | UNSEMIUN Semiconducctor INC 優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司 | UNSEMI | ||
SiliconNPNepitaxialplanertransistor SiliconNPNepitaxialplanertransistor Forswitching/digitalcircuits ■Features ●Twoelementsincorporatedintoonepackage. (Transistorswithbuilt-inresistor) ●Reductionofthemountingareaandassemblycostbyonehalf. ■BasicPartNumberofElement ●UNR1210(UN1210)×2elemen | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
SiliconNPNepitaxialplanartype SiliconNPNepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Mtypepackageallowingeasyautomaticandmanualinsertionas wellasstand-alonefixingtotheprintedcircuitboard | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
SwitchmodeFullPlasticDualUltrafastPowerRectifiers | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | ||
N-Channel20V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?GenIIIPowerMOSFET ?100RgTested ?100UISTested ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel20V(D-S)MOSFET FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronous RectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司 | ANASEM | ||
SurfaceMountMultilayerCeramicChipCapacitorSolutionsforBoardflexSensitiveApplications | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號(hào):
TUSB1210RHBR
- 制造商:
Texas Instruments
- 功能描述:
USB 2.0 ULPI TRANSCEIVER - Tape and Reel
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
TI/德州儀器 |
2023+ |
SMD |
7093 |
一級(jí)代理優(yōu)勢(shì)現(xiàn)貨,全新正品直營(yíng)店 |
詢價(jià) | ||
TI/德州儀器 |
23+ |
BGA |
3000 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
TI |
17+ |
NA |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
TI |
2016+ |
BGA36 |
1000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
TI |
22+23+ |
BGA |
26980 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
TexasInstruments |
18+ |
TXRXUSB2.0ULPI36TFBGA |
6800 |
公司原裝現(xiàn)貨/歡迎來電咨詢! |
詢價(jià) | ||
TI/德州儀器 |
18+ |
JRBGA |
8257 |
向鴻專營(yíng)TI ADI,代理渠道可訂貨 |
詢價(jià) | ||
TI |
2020+ |
BGA36 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
Texas Instruments |
21+ |
36-BGA MircoStar Junior |
65200 |
一級(jí)代理/放心采購 |
詢價(jià) | ||
TI |
21+ |
BGA36 |
1288 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) |
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