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TZ2762E

Crystal Unit SMD 2.0x1.6 40.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

U2762B

900-MHzISMBandReceiver

Temic

TEMIC Semiconductors

U2762B-BFS

900-MHzISMBandReceiver

Temic

TEMIC Semiconductors

UPA2762UGR

MOSFIELDEFFECTTRANSISTOR

Description TheμPA2762UGRisN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofanotebookcomputer. Features ?Lowon-stateresistance ?RDS(on)1=13.5mΩMAX.(VGS=10V,ID=12A) ?RDS(on)2=22mΩMAX.(VGS=4.5V,ID=10A) ?LowCiss:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762T

3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheμPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=3

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2762T

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz ?Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762T

3V,WIDEBANDMEDIUMPOWERSIMMICAMPLIFIER

DESCRIPTION TheUPC2762TandUPC2763TareSiliconMonolithicintegratedcircuitswhicharemanufacturedusingtheNESATIIIprocess.TheNESATIIIprocessproducestransistorswithfTapproaching20GHz.Theseamplifiersweredesignedfor900MHzand1.9GHzreceiversincellular,cordlessteleph

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2762T

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=30mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz ?Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762T

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz ?Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=30mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz ?Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz ?Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz ?Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2762TB

3V,SUPERMINIMOLDMEDIUMPOWERSIMMICAMPLIFIER

CEL

California Eastern Labs

UPC2762TB

3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheμPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=3

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2762TB

3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheμPC2762TB,μPC2763TBandμPC2771TBaresiliconmonolithicintegratedcircuitsdesignedasamplifierformobilecommunications.TheseICsoperateat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. TheseICismanufacturedusingNEC’s20GHzfTN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

供應(yīng)商型號品牌批號封裝庫存備注價格
TST
23+
-
35375
華南總代
 詢價
TST
21+
標(biāo)準(zhǔn)封裝
6000
進口原裝,訂貨渠道!
 詢價
TST
24+
15800
真實庫存/絕無虛假/支持送貨
 詢價
24+
N/A
67000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
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TST
23+
SMD
56000
TST全系列在售,支持實單
 詢價
TST
23+
SMD
25000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
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更多TZ2762E供應(yīng)商 更新時間2025-1-11 9:18:00

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