U62H64SA35LG1中文資料ZMD數(shù)據(jù)手冊PDF規(guī)格書

Description

The U62H64 is a static RAM manufactured using a CMOS process technology with the following operating modes:

- Read - Standby

- Write - Data Retention

The memory array is based on a 6-transistor cell

Features

? Fast 8192 x 8 bit static CMOS RAM

? 20 ns, 25 ns, 35 ns Access Times

? Bidirectional data inputs and data outputs

? Three-state outputs

? Data retention current at 3 V: < 10 μA (standard)

? Standby current standard < 30 μA

? Standby current low power (L) < 5 μA

? TTL/CMOS-compatible

? Automatic reduction of power dissipation in long Read or Write cycles

? Power supply voltage 5 V

? Operating temperature ranges: 0 to 70 °C -25 to 85 °C -40 to 85 °C

? Quality assessment according to CECC 90000, CECC 90100 and CECC 90111

? ESD protection > 2000 V (MIL STD 883C M3015.7)

? Latch-up immunity > 200 mA

? Packages: PDIP28 (300 mil) SOJ28 (300 mil)