UCC14130-Q1中文資料德州儀器數(shù)據(jù)手冊PDF規(guī)格書

1 Features

? Fully integrated high-density isolated DC/DC

module with isolation transformer

? Isolated DC/DC for driving: IGBTs, GaN, SiC, and

Si MOSFETs

? Input voltage range: 10 V to 18 V with 32-V

absolute maximum

? 1.5-W output power at TA ≤ 105°C

? 1.0-W output power for 10 V < VVIN < 18 V at TA =

105°C

? Adjustable single or dual output voltages (using

resistors) with < ±1.3 regulation accuracy over

full operating range

? Low electromagnetic emission with spread

spectrum modulation and integrated transformer

design

? Enable, Power Good, UVLO, OVLO, soft-start,

short-circuit, power-limit, under-voltage, overvoltage,

and over-temperature protection

? CMTI > 150 kV/μs

? AEC-Q100 qualified for automotive applications

– Temperature grade 1: –40°C ≤ TJ ≤ 150°C

– Temperature grade 1: –40 °C ≤ TA ≤ 125°C

? Functional Safety-Capable

– Documentation available to aid functional safety

system design

? Planned safety-related certifications:

– 5657-VPK basic isolation per DIN EN IEC

60747-17 (VDE 0884-17)

– 3000-VRMS isolation for 1 minute per UL1577

– Basic insulation per CQC GB4943.1

? 36-pin, wide SSOP package

2 Applications

? Hybrid, electric and power train system (EV/HEV)

– Inverter and motor control

– On-board (OBC) and wireless charger

– Automotive DC/DC converter

? Grid infrastructure

– EV charging station power module

– DC charging (pile) station

– String inverter

? Motor drives

? Industrial Transport

? Merchant Server PSU

3 Description

UCC14130-Q1 is an automotive qualified high

isolation voltage DC/DC power module designed

to provide power to GaN, IGBT, SiC, or Si gate

drivers. The UCC14130-Q1 integrates a transformer

and DC/DC controller with a proprietary architecture

to achieve high efficiency with very low emissions.

It can provide an isolated 12-V output from a 12-V

regulated input for driving GaN and Si MOSFETs; and

an isolated 15-V or 18-V output from a 15-V regulated

input to bias the driver circuit for SiC MOSFET or

IGBTs. The high-accuracy provides better channel

enhancement for higher system efficiency without

over-stressing the power device gate.

The UCC14130-Q1 provides up to 1.5W (typical) of

isolated output power at high efficiency. Requiring

a minimum of external components and including

on-chip device protection, the module provides

extra features such as input undervoltage lockout,

overvoltage lockout, output voltage power-good

comparators, overtemperature shutdown, soft-start

time-out, adjustable isolated positive and negative

output voltage, an enable pin, and an open-drain

output power-good pin.