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UCC27311A中文資料德州儀器數(shù)據(jù)手冊PDF規(guī)格書

UCC27311A
廠商型號(hào)

UCC27311A

功能描述

UCC27311A-Q1 Automotive 120V, 3.7A/4.5A Half-Bridge Driver with 8V UVLO and Enable

文件大小

1.27632 Mbytes

頁面數(shù)量

31

生產(chǎn)廠商 Texas Instruments
企業(yè)簡稱

TI德州儀器

中文名稱

美國德州儀器公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

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更新時(shí)間

2025-1-20 15:28:00

UCC27311A規(guī)格書詳情

1 Features

? Drives two N-channel MOSFETs in half-bridge

configuration

? AEC-Q100 qualified for automotive applications:

– Device temperature grade 1

? –40°C to +150°C junction temperature range

? 120V abs max voltage on HB pin

? 3.7A sink, 4.5A source output currents

? 8V to 17V VDD operating range (20V abs max)

with UVLO

? –(28–VDD)V abs max negative transient tolerance

on HS pin (<100ns pulse)

? –10V to +20V abs max input pins tolerance,

independent of supply voltage range (TTL

compatible)

? Switching parameters:

– 20ns typical propagation delay times

– 7.2ns rise and 5.5ns fall time with 1000pF load

– 4ns typical delay matching

? Integrated bootstrap diode

? Enable/disable functionality with low current

consumption (3μA typical) when disabled

? Functional Safety-Capable

– Documentation available to aid functional safety

system design

2 Applications

? Automotive DC/DC converters and OBC

? 2-wheeler and 3-wheeler traction drive and battery

pack

? Electric power steering (EPS)

? Wireless charging

? Smart glass module

3 Description

The UCC27311A-Q1 is a robust gate driver designed

to drive two N-channel MOSFETs in a half-bridge

or synchronous buck configuration with an absolute

maximum bootstrap voltage of 120V. Its 3.7A peak

source and 4.5A peak sink current capability allows

the UCC27311A-Q1 to drive large power MOSFETs

with minimized switching losses during the transition

through the Miller Plateau. The switching node

(HS pin) can handle negative transient voltage,

which allows the high-side channel to be protected

from inherent negative voltages caused by parasitic

inductance and stray capacitance.

The inputs are independent of supply voltage and are

able to withstand -10V and +20V absolute maximum

ratings. The low-side and high-side gate drivers are

matched to 4ns between the turn on and turn off of

each other and are controlled throught the LI and

HI input pins respectively. An on-chip 120V rated

bootstrap diode eliminates the need to add discrete

bootstrap diodes. Undervoltage lockout (UVLO) is

provided for both the high-side and the low-side

drivers which provides symmetric turn on and turn

off behavior and forces the outputs low if the drive

voltage is below the specified threshold.

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TI
10+
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6000
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TI(德州儀器)
23+
N/A
6000
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8931
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TI
1708+
?
14860
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TI(德州儀器)
23+
NA
20094
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TI(德州儀器)
24+
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6000
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22+
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20000
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ADI
23+
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8000
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TI德州儀器
22+
24000
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TI/德州儀器
2021+
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100500
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