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  • 首頁(yè)>UCC28C50_V02>規(guī)格書詳情

    UCC28C50_V02中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書

    UCC28C50_V02
    廠商型號(hào)

    UCC28C50_V02

    功能描述

    UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

    文件大小

    3.20649 Mbytes

    頁(yè)面數(shù)量

    56 頁(yè)

    生產(chǎn)廠商 Texas Instruments
    企業(yè)簡(jiǎn)稱

    TI德州儀器

    中文名稱

    美國(guó)德州儀器公司官網(wǎng)

    原廠標(biāo)識(shí)
    數(shù)據(jù)手冊(cè)

    下載地址一下載地址二到原廠下載

    更新時(shí)間

    2025-1-26 23:00:00

    UCC28C50_V02規(guī)格書詳情

    1 Features

    ? Undervoltage lockout options to support both Si

    and SiC MOSFET applications

    ? 30-V VDD absolute maximum voltage

    ? 1-MHz maximum fixed frequency operation

    ? 50-μA startup current, 75-μA maximum

    ? Low operating current: 1.3 mA (at fOSC = 52 kHz)

    ? Fast 35-ns, cycle-by-cycle overcurrent limiting

    ? ±1-A peak driving current

    ? Rail-to-rail output

    – 25-ns rise time

    – 20-ns fall time

    ? ±1 accurate 2.5-V error amplifier reference

    ? Pin-to-pin compatible and drop-in replacement for

    UCCx8C4x

    ? Functional Safety-Capable

    – Documentation available to aid functional safety

    system design

    2 Applications

    ? General purpose single-ended DC-DC or off-line

    isolated power converters

    ? Auxiliary power supply for solar power inverters,

    motor drives, energy storage systems

    ? Isolated power supply for EV charging stations

    3 Description

    The UCCx8C5x family of devices are highperformance

    current-mode PWM controllers that

    can drive both Si and SiC MOSFETs in various

    applications. The UCCx8C5x family is a more efficient

    and robust version of the UCCx8C4x.

    The UCCx8C5x family has new UVLO thresholds

    that allow for reliable SiC MOSFET operation

    (UCC28C56-59), in addition to existing UVLO

    thresholds for continued Si MOSFET support

    (UCCx8C50-55).

    VDD absolute maximum voltage rating is extended

    from 20 V to 30 V for optimally driving the gate of

    20-Vgs, 18-Vgs, or 15-Vgs SiC MOSFETs, while also

    allowing for the exclusion of an external LDO.

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