UCC38C52DR中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

1 Features

? Undervoltage lockout options to support both Si

and SiC MOSFET applications

? 30-V VDD absolute maximum voltage

? 1-MHz maximum fixed frequency operation

? 50-μA startup current, 75-μA maximum

? Low operating current: 1.3 mA (at fOSC = 52 kHz)

? Fast 35-ns, cycle-by-cycle overcurrent limiting

? ±1-A peak driving current

? Rail-to-rail output

– 25-ns rise time

– 20-ns fall time

? ±1 accurate 2.5-V error amplifier reference

? Pin-to-pin compatible and drop-in replacement for

UCCx8C4x

? Functional Safety-Capable

– Documentation available to aid functional safety

system design

2 Applications

? General purpose single-ended DC-DC or off-line

isolated power converters

? Auxiliary power supply for solar power inverters,

motor drives, energy storage systems

? Isolated power supply for EV charging stations

3 Description

The UCCx8C5x family of devices are highperformance

current-mode PWM controllers that

can drive both Si and SiC MOSFETs in various

applications. The UCCx8C5x family is a more efficient

and robust version of the UCCx8C4x.

The UCCx8C5x family has new UVLO thresholds

that allow for reliable SiC MOSFET operation

(UCC28C56-59), in addition to existing UVLO

thresholds for continued Si MOSFET support

(UCCx8C50-55).

VDD absolute maximum voltage rating is extended

from 20 V to 30 V for optimally driving the gate of

20-Vgs, 18-Vgs, or 15-Vgs SiC MOSFETs, while also

allowing for the exclusion of an external LDO.