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UH1PB_V01

Surface Mount Ultrafast Rectifier

FEATURES ?Verylowprofile-typicalheightof1.0mm ?Idealforautomatedplacement ?Oxideplanarchipjunction ?Ultrafastrecoverytimesforhighfrequency ?MeetsMSLlevel1perJ-STD-020,LFmaximumpeakof 260°C ?ComplianttoRoHSDirective2002/95/ECandin accordancetoWEEE

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

ES1PB_V01

HighCurrentDensitySurfaceMountUltrafastRectifiers

FEATURES ?Verylowprofile-typicalheightof1.0mm ?Idealforautomatedplacement ?Glasspassivatedpelletchipjunction ?Ultrafastrecoverytimesforhighefficiency ?Lowforwardvoltage,lowpowerlosses ?Lowthermalresistance ?MeetsMSLlevel1perJ-STD-020,LFmaximumpeak

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

ESH1PB_V01

HighCurrentDensitySurface-MountUltrafastRectifiers

FEATURES ?Verylowprofile-typicalheightof1.0mm ?Idealforautomatedplacement ?Glasspassivatedpelletchipjunction ?Ultrafastrecoverytimesforhighfrequency ?Lowforwardvoltagedrop,lowpowerloss ?Lowthermalresistance ?MeetsMSLlevel1perJ-STD-020,LFmaximumpeak

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MSE1PB_V01

Surface-MountESDCapabilityRectifier

FEATURES ?Verylowprofile-typicalheightof0.65mm ?Idealforautomatedplacement ?Oxideplanarchipjunction ?Lowforwardvoltagedrop,lowleakage current ?ESDcapability ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C ?AEC-Q101qualifiedavailable -Automotive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MSX1PB_V01

Surface-MountESDCapabilityRectifier

FEATURES ?Verylowprofile-typicalheightof0.65mm ?Idealforautomatedplacement ?Oxideplanarchipjunction ?Lowforwardvoltagedrop,lowleakagecurrent ?ESDcapability ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C ?AEC-Q101qualifiedavailable? -Automotive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MUH1PB_V01

SurfaceMountUltrafastRectifiers

FEATURES ?Verylowprofile-typicalheightof0.65mm ?Idealforautomatedplacement ?Oxideplanarchipjunction ?Lowforwardvoltagedrop,lowpowerlosses ?Ultrafastrecoverytimesforhighfrequency ?MeetsMSLlevel1,perJ-STD-020C, LFmaximumpeakof260°C ?AEC-Q101qualifie

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

RS1PB_V01

HighCurrentDensitySurface-MountGlassPassivatedFastSwitchingRectifier

FEATURES ?Verylowprofile-typicalheightof1.0mm ?Idealforautomatedplacement ?Glasspassivatedpelletchipjunction ?Fastswitchingforhighefficiency ?Lowthermalresistance ?Highforwardsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C ?AEC-

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

S1PB_V01

HighCurrentDensitySurface-MountGlassPassivatedRectifiers

FEATURES ?Verylowprofile-typicalheightof1.0mm ?Idealforautomatedplacement ?Glasspassivatedpelletchipjunction ?Lowforwardvoltagedrop ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C ?AEC-Q101qualified ?Materialcategorization:

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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更多UH1PB_V01供應(yīng)商 更新時(shí)間2025-1-29 10:14:00

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