| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
UM2110 | PIN DIODE DESCRIPTION UM2100SeriesPINdiodesaredesignedfortransmit/receiveswitchandattenuatorapplicationsinHFband(2-30MHz)andbelow.Asseriesconfiguredswitches,theselonglifetime(25μstypical)diodescancontrolupto2.5kW,CWina50ohmsystem.InHFband,insertionlossisless | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
UM2110 | ATTENUATOR AND POWER PIN DIODES 2 ??30 MHz | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
Product Change Notification | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
Product Change Notification | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
SiliconPNPepitaxialplanertransistor SiliconPNPepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking | PanasonicPanasonic Corporation 松下松下電器 | Panasonic | ||
SiliconPNPepitaxialplanartype SiliconPNPepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking | PanasonicPanasonic Corporation 松下松下電器 | Panasonic | ||
L-BANDPADRIVERAMPLIFIER DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
L-BANDPADRIVERAMPLIFIER DESCRIPTION NECsUPG2110TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V, fRF=1850to1910MHz | CEL California Eastern Labs | CEL | ||
LINEARINTEGRATEDCIRCUIT | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
Finger-shapedheatsinkTO-126 | ASSMANNASSMANN WSW COMPONENTS ASSMANN WSW組件有限公司 | ASSMANN | ||
Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司 | ANASEM | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeVerticalDMOSFET | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
P-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheSupertexVP2110isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda | SUTEX Supertex, Inc | SUTEX | ||
WaterproofCircularConnectorsforSolderTerminationsMeetingIP67 | DDKDDK Ltd. 第一電子工業(yè)株式會社第一電子工業(yè)有限公司 | DDK | ||
WaterproofCircularConnectorsforSolderTerminationsMeetingIP67 | DDKDDK Ltd. 第一電子工業(yè)株式會社第一電子工業(yè)有限公司 | DDK |
詳細(xì)參數(shù)
- 型號：
UM2110
- 制造商：
Microsemi Corporation
- 功能描述：
PIN ATTENUATOR/SWIT 1KV - Bulk
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
UMEC |
2021+ |
DIP |
11000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | ||
UMEC |
23 |
DIP |
55000 |
原廠渠道原裝正品假一賠十 |
詢價 | ||
UMEC |
20+ |
DIP |
52628 |
進口原裝現(xiàn)貨/價格優(yōu)勢 |
詢價 | ||
UMEC |
23+ |
DIP |
300 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
UMEC |
23+ |
DIP |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
UTC |
20232024 |
SOT25 |
6000 |
老牌代理,長期現(xiàn)貨 |
詢價 | ||
原廠 |
2023+ |
模塊 |
600 |
專營模塊,繼電器,公司原裝現(xiàn)貨 |
詢價 |
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