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UPC2406AHF

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Built-inthesaturationprotectioncircuitoftheoutputtransistor. ?Thecapabilityofoutputcurrentis1A ?Highaccuracyofoutputvoltage. |DVO|£±2(TJ=25°C) |DVO|£±3(0°C£TJ£125°C) ?Lowdropoutvoltage. VDIF£1V(IO£1A,TJ£125°C) ?Built-in

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2406AHF

THREETERMINALLOWDROPOUTVOLTAGEREGULATOR

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2406TB

0.01to3.0GHzSPDTSWITCH

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2406TB

GaAsINTEGRATEDCIRCUIT

FEATURES ?Switchcontrolvoltage:Vcont(H)=1.8to5.3V(2.7VTYP.) :Vcont(L)=?0.2to+0.2V(0VTYP.) ?Lowinsertionloss:Lins=0.40dBTYP.@f=1.0GHz,Vcont(H)=2.7V,Vcont(L)=0V :Lins=0.47dBTYP.@f=2.5GHz,Vcont(H)=2.7V,Vcont(L)=0V ?Highisolati

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPG2406TK

GaAsINTEGRATEDCIRCUIT

FEATURES ?Switchcontrolvoltage:Vcont(H)=1.8to5.3V(2.7VTYP.) :Vcont(L)=?0.2to+0.2V(0VTYP.) ?Lowinsertionloss:Lins=0.40dBTYP.@f=1.0GHz,Vcont(H)=2.7V,Vcont(L)=0V :Lins=0.47dBTYP.@f=2.5GHz,Vcont(H)=2.7V,Vcont(L)=0V ?Highisolati

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPG2406TK

0.01to3.0GHzSPDTSWITCH

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2406TK

0.01to3.0GHzSPDTSWITCH

CEL

California Eastern Labs

V2406A

Intel3rdGenCoreCPU,EN50155railwaycomputer

moxaMOXA

臺(tái)灣摩莎摩莎科技(上海)有限公司

V2406C

7thGenIntelCoreCPUrailwaycomputers

moxaMOXA

臺(tái)灣摩莎摩莎科技(上海)有限公司

VBL2406

P-Channel40-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VN2406

N-ChannelEnhancement-ModeVerticalDMOSFET

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

VN2406

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped

SUTEX

Supertex, Inc

VN2406

N-ChannelEnhancement-Mode

Features ?Freefromsecondarybreakdown ?Lowpowerdriverequirement ?Easeofparalleling ?LowCISSandfastswitchingspeeds ?Excellentthermalstability ?IntegralSource-Draindiode ?Highinputimpedanceandhighgain ?ComplementaryN-andP-channeldevices Applications ?Motor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

VN2406

N-ChannelEnhancement-ModeVerticalDMOSFET

SUTEX

Supertex, Inc

VN2406D

N-Channel240-V(D-S)MOSFETs

FEATURES ●LowOn-Resistance:3.5Ω ●SecondaryBreakdownFree:260V ●LowPower/VoltageDriven ●LowInputandOutputLeakage ●ExcellentThermalStability BENEFITS ●LowOffsetVoltage ●Full-VoltageOperation ●EasilyDrivenWithoutBuffer ●LowErrorVoltage ●NoHigh-Temperature“

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VN2406L

N-Channel240-V(D-S)MOSFETs

FEATURES ●LowOn-Resistance:3.5Ω ●SecondaryBreakdownFree:260V ●LowPower/VoltageDriven ●LowInputandOutputLeakage ●ExcellentThermalStability BENEFITS ●LowOffsetVoltage ●Full-VoltageOperation ●EasilyDrivenWithoutBuffer ●LowErrorVoltage ●NoHigh-Temperature“

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VN2406L

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped

SUTEX

Supertex, Inc

VN2406L

TMOSFETTransistor

TMOSFETTransistor N–Channel—Enhancement

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

VN2406L

N-ChannelEnhancement-Mode

Features ?Freefromsecondarybreakdown ?Lowpowerdriverequirement ?Easeofparalleling ?LowCISSandfastswitchingspeeds ?Excellentthermalstability ?IntegralSource-Draindiode ?Highinputimpedanceandhighgain ?ComplementaryN-andP-channeldevices Applications ?Motor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

VN2406L

SmallSignalMOSFET200mAmps,240Volts

SmallSignalMOSFET200mAmps,240VoltsN?ChannelTO?92 200mAMPS240VOLTSRDS(on)=6Ω

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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23+
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300
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10265
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02+
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2
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22+
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1000
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02+
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6000
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0248+
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285
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21+
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6000
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22+
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8650
原裝現(xiàn)貨假一賠十
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24+
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10000
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2023+
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5185
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更多UM2406供應(yīng)商 更新時(shí)間2025-1-7 14:44:00