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UNR2110

SiliconPNPepitaxialplanartype

SiliconPNPepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking

PanasonicPanasonic Semiconductor

松下松下電器

UPG2110TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPG2110TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION NECsUPG2110TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V, fRF=1850to1910MHz

CEL

California Eastern Labs

UTCM2110

LINEARINTEGRATEDCIRCUIT

UTCUnisonic Technologies

友順友順科技股份有限公司

V2110B

Finger-shapedheatsinkTO-126

ASSMANN

ASSMANN WSW COMPONENTS

VDA2110CTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導體安納森半導體香港有限公司

VDA2110NTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導體安納森半導體香港有限公司

VN2110

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VN2110ND

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VP2110

P-ChannelEnhancement-ModeVerticalDMOSFET

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

詳細參數

  • 型號：

    UN2110R

  • 功能描述：

    TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23

供應商型號品牌批號封裝庫存備注價格
Panasonic/松下
24+
SOT-23
8900
新進庫存/原裝
 詢價
Panasonic
21+
SOT-23
6000
絕對原裝現貨
 詢價
Panasonic/
2022
SOT-23
8900
全新原裝現貨熱賣
 詢價
PANASONIC
24+
SOT-23
4897
絕對原裝!現貨熱賣!
 詢價
Panason
23+
SOT-23
8560
受權代理!全新原裝現貨特價熱賣!
 詢價
PANASONIC/松下
23+
SOT-23
50000
全新原裝正品現貨,支持訂貨
 詢價
PANASON/松下
23+
NA/
9250
原裝現貨,當天可交貨,原型號開票
 詢價
SOT-23
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
PANASONIC/松下
23+
SOT-23
20000
原裝正品 歡迎咨詢
 詢價
PANASONIC
SOT23
90000
公司集團化配單-有更多數量-免費送樣-原包裝正品現貨-
 詢價
更多UN2110R供應商 更新時間2025-1-25 14:00:00

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