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UPG2110TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2110TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION NECsUPG2110TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V, fRF=1850to1910MHz

CEL

California Eastern Labs

UTCM2110

LINEARINTEGRATEDCIRCUIT

UTCUnisonic Technologies

友順友順科技股份有限公司

V2110B

Finger-shapedheatsinkTO-126

ASSMANN

ASSMANN WSW COMPONENTS

VDA2110CTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDA2110NTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VN2110

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VN2110ND

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VP2110

P-ChannelEnhancement-ModeVerticalDMOSFET

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

VP2110

P-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertexVP2110isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi

SUTEX

Supertex, Inc

詳細(xì)參數(shù)

  • 型號(hào):

    UNR2110R

  • 功能描述:

    TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Panasonic
16+
Mini3-G3-B
34300
鍏ㄦ柊鍘熻鐜拌揣/浠鋒牸鍙皥!
詢價(jià)
PANASONIC
23+
SOT23
30000
原裝正品,假一罰十
詢價(jià)
PANASONI
23+
SOT-23
63000
原裝正品現(xiàn)貨
詢價(jià)
Panasonic
20+
Mini3-G3-B
36800
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
詢價(jià)
Panasonic
2023+
Mini3-G3-B
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
Panasonic
24+
Mini3-G3-B
34300
原裝現(xiàn)貨假一賠十
詢價(jià)
Panasonic
2022+
Mini3-G3-B
20000
只做原裝進(jìn)口現(xiàn)貨.假一罰十
詢價(jià)
Panasonic/松下
24+
SOT-23
9200
新進(jìn)庫(kù)存/原裝
詢價(jià)
Panasonic/
2022
SOT-23
9200
全新原裝現(xiàn)貨熱賣
詢價(jià)
PANASONIC/松下
23+
SOT23
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
更多UNR2110R供應(yīng)商 更新時(shí)間2025-1-24 15:14:00