UPA1980中文資料瑞薩數據手冊PDF規(guī)格書

DESCRIPTION

The μ PA1980 is a switching device, which can be driven

directly by a 1.8 V power source.

This device incorporates a MOS FET, which features a low

on-state resistance and excellent switching characteristics,

and a low leakage Schottky barrier diode, and is suitable for

applications such as DC/DC converter of portable machine

and so on.

FEATURES

? 1.8 V drive available (MOS FET)

? Low on-state resistance (MOS FET)

RDS(on)1 = 135 mΩ MAX. (VGS = ?4.5 V, ID = ?1.0 A)

RDS(on)2 = 183 mΩ MAX. (VGS = ?2.5 V, ID = ?1.0 A)

RDS(on)3 = 284 mΩ MAX. (VGS = ?1.8 V, ID = ?0.5 A)

? Low reverse current (Schottky barrier diode)

IR = 20 μA MAX. (VR = 40 V)