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UPA2791GR

MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET

DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffectTransistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channel

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA2791GR

N- and P-Channel 30 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?MotorDrive ?MobilePowerBank

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

UPA2791GR

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffect Transistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channelRDS(on)1=82mΩMAX.(VG

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2791GR-E1-AT

MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET

DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffectTransistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channel

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA2791GR-E1-AT

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffect Transistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channelRDS(on)1=82mΩMAX.(VG

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2791GR-E2-AT

MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET

DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffectTransistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channel

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA2791GR-E2-AT

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffect Transistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channelRDS(on)1=82mΩMAX.(VG

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2791

DomePlugs

HeycoHeyco.

海科

2791

500MHzsurfacemountbandpassfilter

KR

KR Electronics, Inc.

2791C

MODEMMAGNETICSV.90ModemTransformer

bel

Bel Fuse Inc.

詳細(xì)參數(shù)

  • 型號(hào)：

    UPA2791GR

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
24+
SOP-8
502868
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
RENESAS
1742+
SOP-8
98215
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品!
 詢價(jià)
RENESAS/瑞薩
20+
SOP-8
63258
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
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RENESAS/瑞薩
23+
SOP-8
50000
全新原裝正品現(xiàn)貨,支持訂貨
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RENESAS/瑞薩
新年份
SOP-8
33288
原裝正品現(xiàn)貨,實(shí)單帶TP來(lái)談!
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R
23+
SOIC-8
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
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RENESAS/瑞薩
24+
NA/
3350
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NEC
22+
SOIC-8
25000
只有原裝原裝,支持BOM配單
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NEC
2023+
SOP-8
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
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NEC
2402+
SOP-8
8324
原裝正品!實(shí)單價(jià)優(yōu)!
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更多UPA2791GR供應(yīng)商 更新時(shí)間2025-4-26 17:06:00

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