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UPA2810

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2810isP-channelMOSFETdesignedforDC/DCconverterandpower managementapplicationsofportableequipments. FEATURES ?Lowon-stateresistance RDS(on)1=12mΩMAX.(VGS=?10V,ID=?13A) RDS(on)2=23mΩMAX.(VGS=?4.5V,ID=?6.5A) ?Built-ingateprotection

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2810T1L-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2810isP-channelMOSFETdesignedforDC/DCconverterandpower managementapplicationsofportableequipments. FEATURES ?Lowon-stateresistance RDS(on)1=12mΩMAX.(VGS=?10V,ID=?13A) RDS(on)2=23mΩMAX.(VGS=?4.5V,ID=?6.5A) ?Built-ingateprotection

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2810T1L-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2810isP-channelMOSFETdesignedforDC/DCconverterandpower managementapplicationsofportableequipments. FEATURES ?Lowon-stateresistance RDS(on)1=12mΩMAX.(VGS=?10V,ID=?13A) RDS(on)2=23mΩMAX.(VGS=?4.5V,ID=?6.5A) ?Built-ingateprotection

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

VDA2810CTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDA2810NTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

WCS2810

HallEffectBaseLinearCurrentSensor

Features: ?Lownoiseanalogsignalpath ?0.5mΩinternalconductorresistance ?OutputvoltageproportionaltoACandDCcurrent ?CurrentSensingrange0~10Aat5Vvoltagesupply ?HighSensitivity135mV/A ?Wideoperatingvoltagerange3.0~12V ?Lowoperatingcurrent3mA ?Nearlyzer

DIWELL

DIWELL Electronics Co., Ltd.

WL2810

Lownoise,HighPSRR,Highspeed,CMOSLDO

WILLSEMIWill Semiconductor Co.,Ltd.Shanghai

韋爾股份上海韋爾半導(dǎo)體股份有限公司

XOPA2810IDCNT

DualChannel,27V,Rail-to-RailInput/OutputFET-InputOperationalAmplifier

TI1Texas Instruments

德州儀器

XOPA2810IDCNT

DualHigh-Performance,Low-Power,WideSupplyRange,Rail-to-RailInput/OutputFET-InputOperationalAmplifier

TI1Texas Instruments

德州儀器

XOPA2810IDCNT

DualChannel,27V,Rail-to-RailInput/OutputFET-InputOperationalAmplifier

TI1Texas Instruments

德州儀器

詳細(xì)參數(shù)

  • 型號(hào):

    UPA2810

  • 功能描述:

    MOSFET P-CH 30V MINI 8-HVSON

  • RoHS:

  • 類別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點(diǎn):

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時(shí)的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝:

    TO-220FP

  • 包裝:

    管件

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS/瑞薩
19+
QFN8
8650
原裝正品,現(xiàn)貨熱賣
詢價(jià)
RENESAS/瑞薩
1950+
QFN8
4856
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價(jià)
RENESAS
2013+
QFN8
18000
剛到現(xiàn)貨加微13425146986
詢價(jià)
RENESAS/瑞薩
2020
QFN8
3300
絕對(duì)全新原裝現(xiàn)貨,歡迎來電查詢
詢價(jià)
RENESAS
2020+
QFN8
8000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
NEC
20+
QFN8
11520
特價(jià)全新原裝公司現(xiàn)貨
詢價(jià)
N
21+
QFN833
6000
絕對(duì)原裝現(xiàn)貨
詢價(jià)
RENESAS
2023+
QFN8
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
RENESAS
24+
QFN8
65200
一級(jí)代理/放心采購(gòu)
詢價(jià)
RENESAS
23+
QFN
30000
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
詢價(jià)
更多UPA2810供應(yīng)商 更新時(shí)間2022-6-12 10:12:00