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UPA808

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES ?LowNoise NF=1.3dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.@VCE=1V,IC=3mA,f=2GHz ?ASuperMiniMoldPackageAdopted ?Built-in2Transistors(2×2SC5184)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA808T

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES ?LowNoise NF=1.3dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.@VCE=1V,IC=3mA,f=2GHz ?ASuperMiniMoldPackageAdopted ?Built-in2Transistors(2×2SC5184)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA808T

SILICON TRANSISTOR

MICROWAVELOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR (WITHBUILT-IN2ELEMENTS)SUPERMINIMOLD FEATURES ?LowNoise NF=1.3dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.@VCE=1V,IC=3mA,f=2GHz ?ASuperMiniMoldPackageAdopted ?Built-in2Transistors

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA808TC

NPN SILICON HIGH FREQUENCY TRANSISTOR

FEATURES ?Built-inhigh-gaintransistor fT=9.0GHzTYP.,?S21e?2=7.5dBTYP.@VCE=1V,IC=10mA,f=2GHz ?Built-in2transistors(2×2SC5436) ?Flat-lead6-pinthin-typeultrasuperminimoldpackage

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA808T-T1

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES ?LowNoise NF=1.3dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.@VCE=1V,IC=3mA,f=2GHz ?ASuperMiniMoldPackageAdopted ?Built-in2Transistors(2×2SC5184)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA808T-T1

SILICON TRANSISTOR

MICROWAVELOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR (WITHBUILT-IN2ELEMENTS)SUPERMINIMOLD FEATURES ?LowNoise NF=1.3dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.@VCE=1V,IC=3mA,f=2GHz ?ASuperMiniMoldPackageAdopted ?Built-in2Transistors

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA808T

NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

UPA808T-T1-A

NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

US808DS

SurfaceMountUltrafastRecoveryRectifier

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

US808DS

SurfaceMountUltraFastRectifiers

JUXINGGuangdong Juxing Electronics Technology Co., Ltd.

廣東鉅興電子廣東鉅興電子科技有限公司

US808VS

SurfaceMountUltraFastRectifiers

JUXINGGuangdong Juxing Electronics Technology Co., Ltd.

廣東鉅興電子廣東鉅興電子科技有限公司

UZ808

POWERZENERS3WATT

DIGITRON

Digitron Semiconductors

VIM-808

VIM-808

VARITRONIXVaritronix international limited

京東方精電京東方精電有限公司(香港)

VIM-808-DP

VIM-808-DP

VARITRONIXVaritronix international limited

京東方精電京東方精電有限公司(香港)

VN808

OCTALHIGHSIDEDRIVERFORTHEAUTOMATIONMARKET

OCTALHIGHSIDEDRIVERFORTHEAUTOMATIONMARKET TheVN808isthefirstoctalsinglechiphigh-sidedriverdevelopedinVIPowerM0-3technology.BoththecontrolandpowerstageuseN-MOStechnology.VN808has8differentchannelswithsingleprotectionanddiagnosticfunctionsintegratedonasi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

VN808CM

LOWTHRESHOLDOCTALHIGHSIDEDRIVER

Description TheVN808CMisamonolithicdevicedesignedwithSTMicroelectronicsVIPowerM0-3Technology,andisintendedfordrivinganykindofloadwithonesideconnectedtoground. GeneralFeatures ■CMOSCOMPATIBLEINPUT ■JUNCTIONOVER-TEMPERATUREPROTECTION ■CASEOVER-TEMPERATUREPROT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

VN808CM-E

Octalchannelhighsidedriver

Description TheVN808CM-EisamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0-3technology,intendedfordrivinganykindofloadwithonesideconnectedtoground.Itcanbedrivenbyusinga3.3Vlogicsupply. Features ■CMOScompatibleinput ■Junctionovertemperatureprotecti

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

VN808CMTR-E

Octalchannelhighsidedriver

Description TheVN808CM-EisamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0-3technology,intendedfordrivinganykindofloadwithonesideconnectedtoground.Itcanbedrivenbyusinga3.3Vlogicsupply. Features ■CMOScompatibleinput ■Junctionovertemperatureprotecti

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

VN808-E

Octalchannelhighsidedriver

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

VN808-E

Octalchannelhighsidedriver

Description TheVN808-EisamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0-3technology,intendedfordrivinganykindofloadwithonesideconnectedtoground. Features ■VCC/2compatibleinput ■Junctionover-temperatureprotection ■Caseover-temperatureprotectionfortherm

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    UPA808

  • 制造商:

    Renesas Electronics Corporation

  • 功能描述:

    RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
22+
SOT23-5
2500
強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢!
詢價(jià)
NEC
22+
SOT-523
4897
絕對(duì)原裝!現(xiàn)貨熱賣!
詢價(jià)
NEC
24+
SOT-523
9200
新進(jìn)庫存/原裝
詢價(jià)
NEC
2020+
SOT-363
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
詢價(jià)
SOT-363SO
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價(jià)
RENESAS
23+
SOT-363
63000
原裝正品現(xiàn)貨
詢價(jià)
NEC
08+PB
SOT-363
200000
詢價(jià)
NEC
20+
SOT-363
36800
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
詢價(jià)
NEC
2020+
SOT-523
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
NEC
21+
SOT323-6
6000
絕對(duì)原裝現(xiàn)貨
詢價(jià)
更多UPA808供應(yīng)商 更新時(shí)間2024-11-15 14:57:00