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UPA810T

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

TheμPA810Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoise NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain |S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?ASmallMiniMoldPackageA

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA810T

NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

UPA810T

NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

UPA810TC

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION TheμPA810TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Fla

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA810TC

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR (WITHBUILT-IN2′2SC5006) FLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLD FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead6-pinthin-typeultrasuper

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA810TC-T1

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION TheμPA810TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Fla

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA810TF

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION TheUPA810TFcontainstwoNE856NPNhighfrequencysiliconbipolarchips.NECsnewlowprofileTFpackageisidealforallportablewirelessapplicatonswherereducingcomponentheightisaprimeconsideration.Eachtransistorchipisindependentlymountedandeasilyconfiguredfor

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA810T-T1

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

TheμPA810Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoise NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain |S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?ASmallMiniMoldPackageA

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA810T_09

NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

UPA810T_V1

NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

詳細參數(shù)

  • 型號：

    UPA810T

  • 功能描述：

    射頻雙極小信號晶體管 NPN High Frequency

  • RoHS：

    否

  • 制造商：

    NXP Semiconductors

  • 配置：

    Single

  • 晶體管極性：

    NPN

  • 最大工作頻率：

    7000 MHz 集電極—發(fā)射極最大電壓

  • VCEO：

    15 V 發(fā)射極 - 基極電壓

  • VEBO：

    2 V

  • 集電極連續(xù)電流：

    0.15 A

  • 功率耗散：

    1000 mW 直流集電極/Base Gain hfe

  • 最大工作溫度：

    + 150 C

  • 封裝/箱體：

    SOT-223

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
SOT-363/SOT-323-6
93800
新進庫存/原裝
 詢價
NEC
1742+
SOT363
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
 詢價
NEC
21+
SOT-363
6000
絕對原裝現(xiàn)貨
 詢價
NEC
2023+
SOT-163
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
CEL
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
NEC
2022
SOT-363 / SOT-323-6
93800
全新原裝現(xiàn)貨熱賣
 詢價
NEC
23+
SOT-363
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
NEC
22+
SOT363
25000
只有原裝原裝,支持BOM配單
 詢價
NEC
23+
SOT363
8000
只做原裝現(xiàn)貨
 詢價
NEC
25+
SOT23-6
2500
強調(diào)現(xiàn)貨,隨時查詢!
 詢價
更多UPA810T供應(yīng)商 更新時間2025-2-25 10:20:00

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