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UPA835TF-T1中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

UPA835TF-T1
廠商型號(hào)

UPA835TF-T1

功能描述

NPN SILICON EPITAXIAL TWIN TRANSISTOR

文件大小

72.41 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商 Renesas Electronics America
企業(yè)簡(jiǎn)稱

NEC瑞薩

中文名稱

日本瑞薩電子株式會(huì)社官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-11 23:00:00

UPA835TF-T1規(guī)格書(shū)詳情

DESCRIPTION

The UPA835TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs.

FEATURES

? LOW NOISE:

Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA

Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA

? HIGH GAIN:

Q1: |S21E|2 = 8.5 dB TYP at f = 1 GHz, VCE = 3 V, lc = 10 mA

Q2: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA

? 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

? 2 DIFFERENT BUILT-IN TRANSISTORS(Q1: NE685, Q2: NE856)

產(chǎn)品屬性

  • 型號(hào):

    UPA835TF-T1

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    NPN SILICON EPITAXIAL TWIN TRANSISTOR

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