UPC8151TB開發(fā)板套件編程器的射頻評估開發(fā)套件開發(fā)板規(guī)格書PDF中文資料

DESCRIPTION

The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on internal 50 : wideband matched IC. These low current amplifiers operate on 3.0 V.

These ICs are manufactured using NEC’s 20 GHz fT NESAT? III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.

FEATURES

? Low current consumption : μPPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V

μPPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V

μ PPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V

? Supply voltage : VCC = 2.4 to 3.3 V

? High efficiency : μPPC8128TA ; PO (1 dB) = e4.0 dBm TYP. @ f = 1 GHz

μPPC8151TA ; PO (1 dB) = +2.5 dBm TYP. @ f = 1 GHz

μPPC8152TA ; PO (1 dB) = e4.5 dBm TYP. @ f = 1 GHz

? Power gain variation : μPPC8128TA, 8151TA ; GP = 12.5 dB TYP. @ f = 1 GHz

μPPC8152TA ; GP = 23.0 dB TYP. @ f = 1 GHz

? Operating frequency : 100 to 1 900 MHz (Output port LC matching)

? Excellent isolation : μPPC8128TA ; ISL = 39 dB TYP. @ f = 1 GHz

: μPPC8151TA ; ISL = 38 dB TYP. @ f = 1 GHz

: μPPC8152TA ; ISL = 40 dB TYP. @ f = 1 GHz

APPLICATION

? Buffer Amplifiers on 800 to 1 900 MHz cellular / cordless telephones