UPD168103K9-5B4-A中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書

FEATURES

? 5-ch H-bridge circuits employing power MOS FET

? Low-voltage driving

LVDD = 2.7 to 3.6 V, AVDD = 4.5 to 5.5 V, VM12 = VM34 = VSHUTTER = VIRIS = 2.7 to 5.5 V

? Output on-state resistance: 2.0 Ω TYP., 3.0 Ω MAX. (4-ch H-bridge block, sum of top and bottom stage, VM = 5 V)

? PWM output (ch1 to ch4)

? Output current

DC current: ±0.3 A/ch (when each channel is used independently)

Peak current: ±0.7 A/ch (when each channel is used independently)

? 3-ch general-purpose operational amplifier

Input offset voltage: ±5 mV

Input voltage range: 0 to AVDD ? 1.5 V

Output voltage range: 0.2 to AVDD ? 0.2 V

? 1-ch current sink amplifier

Output current: 5 mA

? 1-ch 1/2VDD output amplifier

? IRIS driver block supporting linear driving

? Pre-driver amplifier of the IRIS driver block

? Undervoltage lockout circuit

Output circuit and amplifier stop at LVDD = 1.7 V TYP. or less.

? Overheat protection circuit

Operates at 150°C or more and shuts down the output circuit.

? Mounted on 48-pin plastic WQFN (7 x 7)