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首頁 >UPD16855>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
UPD16855A	文件：134.77 Kbytes Page：28 Pages	DUAL HIGH-SIDE SWITCH FOR USB APPLICATION DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100m?TYP.)respectively. Andtheovercurrentdete	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPD16855A	文件：309.43 Kbytes Page：30 Pages	MOS INTEGRATED CIRCUIT FEATURES ?PchpowerMOSFET,2circuitbuildingin ?Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) ?Preventfromdroppingpowersupplybyovercurrentlimitcircuit ?Thermalshutdowncircuitbuildingin ?UnderVoltageLockedOut(UVLO)ci	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
UPD16855AG	文件：134.77 Kbytes Page：28 Pages	DUAL HIGH-SIDE SWITCH FOR USB APPLICATION DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100m?TYP.)respectively. Andtheovercurrentdete	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPD16855AG	文件：309.43 Kbytes Page：30 Pages	MOS INTEGRATED CIRCUIT FEATURES ?PchpowerMOSFET,2circuitbuildingin ?Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) ?Preventfromdroppingpowersupplybyovercurrentlimitcircuit ?Thermalshutdowncircuitbuildingin ?UnderVoltageLockedOut(UVLO)ci	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
UPD16855BC	文件：134.77 Kbytes Page：28 Pages	DUAL HIGH-SIDE SWITCH FOR USB APPLICATION DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100m?TYP.)respectively. Andtheovercurrentdete	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPD16855BC	文件：309.43 Kbytes Page：30 Pages	MOS INTEGRATED CIRCUIT FEATURES ?PchpowerMOSFET,2circuitbuildingin ?Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) ?Preventfromdroppingpowersupplybyovercurrentlimitcircuit ?Thermalshutdowncircuitbuildingin ?UnderVoltageLockedOut(UVLO)ci	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
UPD16855BG	文件：134.77 Kbytes Page：28 Pages	DUAL HIGH-SIDE SWITCH FOR USB APPLICATION DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100m?TYP.)respectively. Andtheovercurrentdete	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPD16855BG	文件：309.43 Kbytes Page：30 Pages	MOS INTEGRATED CIRCUIT FEATURES ?PchpowerMOSFET,2circuitbuildingin ?Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) ?Preventfromdroppingpowersupplybyovercurrentlimitcircuit ?Thermalshutdowncircuitbuildingin ?UnderVoltageLockedOut(UVLO)ci	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
UPD16855CG	文件：134.77 Kbytes Page：28 Pages	DUAL HIGH-SIDE SWITCH FOR USB APPLICATION DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100m?TYP.)respectively. Andtheovercurrentdete	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPD16855CG	文件：309.43 Kbytes Page：30 Pages	MOS INTEGRATED CIRCUIT FEATURES ?PchpowerMOSFET,2circuitbuildingin ?Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) ?Preventfromdroppingpowersupplybyovercurrentlimitcircuit ?Thermalshutdowncircuitbuildingin ?UnderVoltageLockedOut(UVLO)ci	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
UPD16855DG	文件：134.77 Kbytes Page：28 Pages	DUAL HIGH-SIDE SWITCH FOR USB APPLICATION DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100m?TYP.)respectively. Andtheovercurrentdete	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPD16855DG	文件：309.43 Kbytes Page：30 Pages	MOS INTEGRATED CIRCUIT FEATURES ?PchpowerMOSFET,2circuitbuildingin ?Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) ?Preventfromdroppingpowersupplybyovercurrentlimitcircuit ?Thermalshutdowncircuitbuildingin ?UnderVoltageLockedOut(UVLO)ci	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS

詳細(xì)參數(shù)

型號(hào)：
UPD16855
制造商：
NEC
制造商全稱：
NEC
功能描述：
DUAL HIGH-SIDE SWITCH FOR USB APPLICATION

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	UPD16855B	NEC	24+	DIP-8	48		詢價(jià)
深圳市壹芯創(chuàng)科技有限公司	UPD16855B	NEC	22+	DIP-8	8200	全新原裝現(xiàn)貨!自家?guī)齑?	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	UPD16855BC	NEC	23+	DIP	7000	絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購!	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	UPD16855BC	NEC	23+	DIP-8	11200	原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO	詢價(jià)
深圳市博浩通科技有限公司	UPD16855BG-E2	NEC	23+	SOP8	1662	絕對(duì)現(xiàn)貨庫存	詢價(jià)
深圳市福安甌科技有限公司	UPD16855BG-E2	NEC	22+	SOP8	2850	強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢!	詢價(jià)
深圳市佳鑫美電子科技有限公司	UPD16855BG-E2	NEC	24+	SOP8	2987	只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來電!	詢價(jià)
深圳市宇集芯電子有限公司	UPD16855BG-E2	NEC	24+	SOP8	90000	一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理	詢價(jià)
深圳市富安?？萍加邢薰?/a>	UPD16855BG-E2	NEC	21+	SOP8	6000	絕對(duì)原裝現(xiàn)貨	詢價(jià)
艾睿國(guó)際（香港）有限公司	UPD16855BG-E2	NEC	2021+	SOP-8	100500	一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)

更多UPD16855供應(yīng)商更新時(shí)間2025-1-14 10:20:00

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