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UPG2010TB

L-BANDSPDTSWITCH

DESCRIPTION TheμPG2010TBisGaAsMMICforL-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL-bandapplication. Thisdevicecanoperatefrequencyfrom0.5to2.5GHz,havingthelowinsertionlossandhighisolation. Thisdeviceishousedina6-pi

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2010TB

HIGHPOWERSINGLECONTROLL-BANDSPDTSWITCH

DESCRIPTION NECsUPG2010TBisasinglecontrolGaAsMMICL-bandSPDT(SinglePoleDoubleThrow)switchformobilephoneandL-bandapplications. Thisdevicecanoperatefrom0.5to2.5GHz,withlowinsertionlossandhighisolation. Thisdeviceishousedina6-pinsuperminimoldpackage,suit

CEL

California Eastern Labs

UPG2010TB

GaAsINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VDD=2.7to3.0V(2.8VTYP.) ?Switchcontrolvoltage:Vcont(H)=2.7to3.0V(2.8VTYP.) :Vcont(L)=?0.2to+0.2V(0VTYP.) ?Lowinsertionloss:LINS1=0.25dBTYP.@f=0.5to1.0GHz,VDD=2.8V,Vcont=2.8V/0V :LINS2=0.30dBTYP.@f=2.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

URF2010

POWERRECTIFIERS(20A,50-200V)

SwitchmodeFullPlasticDualUltrafastPowerRectifiers ...Designedforuseinswitchingpowersupplies,invertersandasfreewheelingdiodes.Thesestate-of-the-artdeviceshavethefollowingfeatures: ?HighSurgeCapacity ?LowPowerLoss,HighEfficiency ?GlassPassivatedchipjunction

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

USF2010FC

SUPERFASTRECTIFIERS

DSK

Diode Semiconductor Korea

USF2010FC

SuperFastRectifiers

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

UT2010

RECTIFIERS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UT2010

StandardRecovery,2Ampto4Amp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

UT2010

STANDARDRECOVERYRECTIFIERS

DIGITRON

Digitron Semiconductors

VDA2010CTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDA2010NTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VFCP2010

UltraHighPrecisionZ-FoilFlipChipResistorwithTCRof±0.05ppm/°C,35SpaceSavingversusWraparoundDesignandPCRof5ppmatRatedPower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VLS2010E

InductorsforPowerCircuitsWoundFerriteVLS-Eseries

OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount

TDKTDK Corporation

TDK株式會(huì)社東電化(中國(guó))投資有限公司

VLS2010E

InductorsforPowerCircuitsWoundFerrite

OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount

TDKTDK Corporation

TDK株式會(huì)社東電化(中國(guó))投資有限公司

VLS2010E

InductorsforPowerCircuitsWoundFerrite

OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount

TDKTDK Corporation

TDK株式會(huì)社東電化(中國(guó))投資有限公司

VLS2010E

InductorsforPowerCircuitsWoundFerrite

OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount

TDKTDK Corporation

TDK株式會(huì)社東電化(中國(guó))投資有限公司

VLS2010E

InductorsforPowerCircuitsWoundFerrite

OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount

TDKTDK Corporation

TDK株式會(huì)社東電化(中國(guó))投資有限公司

VLS2010E

InductorsforPowerCircuitsWoundFerrite

OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount

TDKTDK Corporation

TDK株式會(huì)社東電化(中國(guó))投資有限公司

VN2010L

N-ChannelEnhancement-ModeMOSTransistors

Temic

TEMIC Semiconductors

VN2010L

N-Channel200-V(D-S)MOSFETs

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
24+
BGA
6868
原裝現(xiàn)貨,可開(kāi)13%稅票
詢價(jià)
NEC
22+
BGA
8200
全新原裝現(xiàn)貨!自家?guī)齑?
詢價(jià)
NEC
23+
BGA
3000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價(jià)
OMC
21+
SMD
6000
絕對(duì)原裝現(xiàn)貨
詢價(jià)
NEC
2023+環(huán)保現(xiàn)貨
TQFP52
2500
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
詢價(jià)
NEC
23+
DIP-16
98000
詢價(jià)
NEC
22+
SOP8
14008
原裝正品
詢價(jià)
NEC
2023+
SOP8
3365
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
詢價(jià)
LATT
24+
QFP100
22
詢價(jià)
LATT
23+
QFP/100
7000
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
詢價(jià)
更多UPD2010AL供應(yīng)商 更新時(shí)間2024-11-19 16:16:00