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UPD442012AGY-BB55X-MJH

MOS INTEGRATED CIRCUIT

Features ?131,072wordsby16bitsorganization ?Fastaccesstime:50,55,70,85ns(MAX.) ?Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) ?Lowvoltageoperation (BBversion:VCC=2.7to3.6V,BCversion:VCC=2.2to3.6V) ?LowVCCdataretention:1.0V(MIN.) ?Ope

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD442012AGY-BB55X-MJH-A

MOS INTEGRATED CIRCUIT

Features ?131,072wordsby16bitsorganization ?Fastaccesstime:50,55,70,85ns(MAX.) ?Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) ?Lowvoltageoperation (BBversion:VCC=2.7to3.6V,BCversion:VCC=2.2to3.6V) ?LowVCCdataretention:1.0V(MIN.) ?Ope

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD442012AGY-BB70X-MJH

MOS INTEGRATED CIRCUIT

Features ?131,072wordsby16bitsorganization ?Fastaccesstime:50,55,70,85ns(MAX.) ?Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) ?Lowvoltageoperation (BBversion:VCC=2.7to3.6V,BCversion:VCC=2.2to3.6V) ?LowVCCdataretention:1.0V(MIN.) ?Ope

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD442012AGY-BB70X-MJH-A

MOS INTEGRATED CIRCUIT

Features ?131,072wordsby16bitsorganization ?Fastaccesstime:50,55,70,85ns(MAX.) ?Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) ?Lowvoltageoperation (BBversion:VCC=2.7to3.6V,BCversion:VCC=2.2to3.6V) ?LowVCCdataretention:1.0V(MIN.) ?Ope

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD442012AGY-BB85X-MJH

MOS INTEGRATED CIRCUIT

Features ?131,072wordsby16bitsorganization ?Fastaccesstime:50,55,70,85ns(MAX.) ?Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) ?Lowvoltageoperation (BBversion:VCC=2.7to3.6V,BCversion:VCC=2.2to3.6V) ?LowVCCdataretention:1.0V(MIN.) ?Ope

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD442012AGY-BB85X-MJH-A

MOS INTEGRATED CIRCUIT

Features ?131,072wordsby16bitsorganization ?Fastaccesstime:50,55,70,85ns(MAX.) ?Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) ?Lowvoltageoperation (BBversion:VCC=2.7to3.6V,BCversion:VCC=2.2to3.6V) ?LowVCCdataretention:1.0V(MIN.) ?Ope

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD442012AGY-BC70X-MJH

MOS INTEGRATED CIRCUIT

Features ?131,072wordsby16bitsorganization ?Fastaccesstime:50,55,70,85ns(MAX.) ?Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) ?Lowvoltageoperation (BBversion:VCC=2.7to3.6V,BCversion:VCC=2.2to3.6V) ?LowVCCdataretention:1.0V(MIN.) ?Ope

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD442012AGY-BC70X-MJH-A

MOS INTEGRATED CIRCUIT

Features ?131,072wordsby16bitsorganization ?Fastaccesstime:50,55,70,85ns(MAX.) ?Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) ?Lowvoltageoperation (BBversion:VCC=2.7to3.6V,BCversion:VCC=2.2to3.6V) ?LowVCCdataretention:1.0V(MIN.) ?Ope

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD442012AGY-BC85X-MJH

MOS INTEGRATED CIRCUIT

Features ?131,072wordsby16bitsorganization ?Fastaccesstime:50,55,70,85ns(MAX.) ?Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) ?Lowvoltageoperation (BBversion:VCC=2.7to3.6V,BCversion:VCC=2.2to3.6V) ?LowVCCdataretention:1.0V(MIN.) ?Ope

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD442012AGY-BC85X-MJH-A

MOS INTEGRATED CIRCUIT

Features ?131,072wordsby16bitsorganization ?Fastaccesstime:50,55,70,85ns(MAX.) ?Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) ?Lowvoltageoperation (BBversion:VCC=2.7to3.6V,BCversion:VCC=2.2to3.6V) ?LowVCCdataretention:1.0V(MIN.) ?Ope

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD442012AGY-BB55X-MJH

2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD442012AGY-BB70X-MJH

2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD442012AGY-BB85X-MJH

2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD442012AGY-BC10X-MJH

2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD442012AGY-BC70X-MJH

2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD442012AGY-BC85X-MJH

2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
RENESAS/瑞薩
1948+
TSSOP-48
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
MIT
21+
QFP
6000
絕對原裝現(xiàn)貨
 詢價
24+
TSOP
17
詢價
NEC
2339+
SSOP
5989
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
NEC
2020+
TSOP
4500
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
NEC
22+
TSOP
5000
全新原裝現(xiàn)貨!價格優(yōu)惠!可長期
 詢價
NEC
22+23+
TSSOP
39908
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
NEC
2020+
TSOP
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
MIT
20+
QFP
500
樣品可出,優(yōu)勢庫存歡迎實單
 詢價
更多UPD442012AGY-B供應(yīng)商 更新時間2025-1-18 15:00:00

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