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UPD5702

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheμPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

CEL

California Eastern Laboratories

UPD5702TU

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheμPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

CEL

California Eastern Laboratories

UPD5702TU

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

FEATURES ?OutputPower:Pout=+21dBmMIN.@Pin=?5dBm,f=1.9GHz,VDS=3.0V :Pout=+21dBmMIN.@Pin=+2dBm,f=2.45GHz,VDS=3.0V ?SingleSupplyvoltage:VDS=3.0VTYP. ?Packagedin8-pinLead-LessMinimold(2.0x2.2x0.5mm)suitableforhigh-densitysurfacemounting.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD5702TU-A

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheμPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

CEL

California Eastern Laboratories

UPD5702TU-E2

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

FEATURES ?OutputPower:Pout=+21dBmMIN.@Pin=?5dBm,f=1.9GHz,VDS=3.0V :Pout=+21dBmMIN.@Pin=+2dBm,f=2.45GHz,VDS=3.0V ?SingleSupplyvoltage:VDS=3.0VTYP. ?Packagedin8-pinLead-LessMinimold(2.0x2.2x0.5mm)suitableforhigh-densitysurfacemounting.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD5702TU-E2-A

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheμPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

CEL

California Eastern Laboratories

UPD5702TU-E2-A

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheμPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

CEL

California Eastern Laboratories

UPD5702TU-E2-A

包裝：散裝 封裝/外殼：8-SMD，扁平引線裸焊盤(pán) 類(lèi)別：RF/IF，射頻/中頻和 RFID 射頻放大器 描述：IC AMP 802.15.1 2.4GHZ 8MINIMOLD

CEL

California Eastern Laboratories

UPD5702TU-EV09

包裝：散裝 類(lèi)別：開(kāi)發(fā)板，套件，編程器 射頻評(píng)估和開(kāi)發(fā)套件，開(kāi)發(fā)板 描述：EVAL BOARD UPD5702TU 900MHZ

CEL

California Eastern Laboratories

UPD5702TU-EV24

包裝：盒 類(lèi)別：開(kāi)發(fā)板，套件，編程器 射頻評(píng)估和開(kāi)發(fā)套件，開(kāi)發(fā)板 描述：EVAL BOARD UPD5702TU 2.4GHZ

CEL

California Eastern Laboratories

VTC5702-RC

ToroidalChokes

ALLIED

Allied Components International

詳細(xì)參數(shù)

  • 型號(hào)：

    UPD5702

  • 制造商：

    CEL

  • 制造商全稱(chēng)：

    CEL

  • 功能描述：

    NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
NEC
24+
SOP-8
118901
新進(jìn)庫(kù)存/原裝
 詢價(jià)
NEC
18+
SOT-8
85600
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
 詢價(jià)
NEC
20+
SOP-8
2960
誠(chéng)信交易大量庫(kù)存現(xiàn)貨
 詢價(jià)
NEC
21+
SOT-8
6000
絕對(duì)原裝現(xiàn)貨
 詢價(jià)
NEC
2023+
SOT-8
80000
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
只做原裝
21+
SSOP-20
36520
一級(jí)代理/放心采購(gòu)
 詢價(jià)
CEL
20+
8-SMD
5000
無(wú)線通信IC,大量現(xiàn)貨!
 詢價(jià)
CEL
20+
射頻元件
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
CEL
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂
 詢價(jià)
更多UPD5702供應(yīng)商 更新時(shí)間2024-10-25 15:00:00

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