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UPD6P9中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

UPD6P9
廠商型號

UPD6P9

功能描述

MOS INTEGRATED CIRCUIT

文件大小

432.52 Kbytes

頁面數(shù)量

45

生產(chǎn)廠商 Renesas Technology Corp
企業(yè)簡稱

RENESAS瑞薩

中文名稱

瑞薩科技有限公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-8 16:42:00

UPD6P9規(guī)格書詳情

FEATURES

? Program memory (one-time PROM): 4074 × 10 bits

? Data memory (RAM): 128 × 4 bits

? On-chip carrier generator for infrared remote control: The high-level and low-level width can be set separately

from 250 ns to 64 μs (@ fX = 4 MHz operation) via modulo

registers

? 9-bit programmable timer: 1 channel

? Instruction execution time: 16 μs (@ fX = 4 MHz) (μPD6P9M1)

8 μs (@ fX = 4 MHz) (μPD6P9M3)

? Stack level: 1 level (stack RAM is for data memory RF as well)

? I/O pins (KI/O): 8 units

? Input pins (KI): 4 units

? Sense input pins (S0, S2): 2 units

? S1/LED pin (I/O): 1 unit (when in output mode, this is the remote control

transmission display pin)

? Power supply voltage: VDD = 2.2 to 3.6 V

? Operating ambient temperature: TA = –40 to +85°C

? Oscillator frequency: fX = 3.5 to 4.5 MHz

? On-chip POC circuit and RAM retention detector

? Capacitor for oscillator: Not available

產(chǎn)品屬性

  • 型號:

    UPD6P9

  • 制造商:

    Renesas Electronics Corporation

  • 功能描述:

    MCU 4-Bit 6X CISC 4KB EPROM 2.5V/3.3V 20-Pin SSOP

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