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UPD6P9M3MC-5A4中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

UPD6P9M3MC-5A4
廠商型號

UPD6P9M3MC-5A4

功能描述

MOS INTEGRATED CIRCUIT

文件大小

432.52 Kbytes

頁面數(shù)量

45

生產(chǎn)廠商 Renesas Technology Corp
企業(yè)簡稱

RENESAS瑞薩

中文名稱

瑞薩科技有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-8 16:57:00

UPD6P9M3MC-5A4規(guī)格書詳情

FEATURES

? Program memory (one-time PROM): 4074 × 10 bits

? Data memory (RAM): 128 × 4 bits

? On-chip carrier generator for infrared remote control: The high-level and low-level width can be set separately

from 250 ns to 64 μs (@ fX = 4 MHz operation) via modulo

registers

? 9-bit programmable timer: 1 channel

? Instruction execution time: 16 μs (@ fX = 4 MHz) (μPD6P9M1)

8 μs (@ fX = 4 MHz) (μPD6P9M3)

? Stack level: 1 level (stack RAM is for data memory RF as well)

? I/O pins (KI/O): 8 units

? Input pins (KI): 4 units

? Sense input pins (S0, S2): 2 units

? S1/LED pin (I/O): 1 unit (when in output mode, this is the remote control

transmission display pin)

? Power supply voltage: VDD = 2.2 to 3.6 V

? Operating ambient temperature: TA = –40 to +85°C

? Oscillator frequency: fX = 3.5 to 4.5 MHz

? On-chip POC circuit and RAM retention detector

? Capacitor for oscillator: Not available

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2000
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15
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NEC
21+
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NEC
22+
3378
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NEC
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NEC
24+
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6868
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