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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
VB1210	文件：768.9 Kbytes Page：9 Pages	N-Channel20V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?GenIIIPowerMOSFET ?100RgTested ?100UISTested ?ComplianttoRoHSDirective2002/95/EC	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
VBA1210	文件：625.13 Kbytes Page：9 Pages	N-Channel20V(D-S)MOSFET FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronous RectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
VBA1210	文件：609.4 Kbytes Page：9 Pages	N-Channel20V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
VDA1210CTA	文件：1.30402 Mbytes Page：18 Pages	Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein	ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司	ANASEM
VDA1210NTA	文件：1.30402 Mbytes Page：18 Pages	Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein	ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司	ANASEM
VJ1210	文件：89.72 Kbytes Page：5 Pages	SurfaceMountMultilayerCeramicChipCapacitorsforTCCCriticalApplications	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
VJ1210	文件：78.63 Kbytes Page：6 Pages	SurfaceMountMultilayerCeramicChipCapacitorsforCommercialApplications	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
VJ1210	文件：135.25 Kbytes Page：15 Pages	SurfaceMountMultilayerCeramicChipCapacitorsforHighReliabilityApplications	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
VJ1210	文件：66.2 Kbytes Page：1 Pages	MultilayerCeramicChipCapacitors	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
VJ1210	文件：208.43 Kbytes Page：15 Pages	SurfaceMountMultilayerCeramicChipCapacitorSolutionsforBoardflexSensitiveApplications	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
VJ1210	文件：136.56 Kbytes Page：14 Pages	SurfaceMountMultilayerCeramicChipCapacitorsforCommercialApplications	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
VJ1210	文件：117.43 Kbytes Page：5 Pages	SurfaceMountMultilayerCeramicChipCapacitorsProhibitSurfaceArc-overinHighVoltageApplications	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
VJ1210	文件：134.02 Kbytes Page：5 Pages	SurfaceMountMultilayerCeramicChipCapacitorsProhibitSurfaceArc-overinHighVoltageApplications	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
VJ1210	文件：342.37 Kbytes Page：6 Pages	SurfaceMountMultilayerCeramicChipCapacitorsforHighReliabilityApplications	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
VJ1210	文件：103.47 Kbytes Page：6 Pages	SurfaceMountMultilayerCeramicChipCapacitorsforCommercialApplications	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
VN1210	文件：70.06 Kbytes Page：2 Pages	N-ChannelEnhancement-ModeVerticalDMOSPowerFETs? AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VN1210B	文件：70.06 Kbytes Page：2 Pages	N-ChannelEnhancement-ModeVerticalDMOSPowerFETs? AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VN1210D	文件：70.06 Kbytes Page：2 Pages	N-ChannelEnhancement-ModeVerticalDMOSPowerFETs? AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VN1210L	文件：70.06 Kbytes Page：2 Pages	N-ChannelEnhancement-ModeVerticalDMOSPowerFETs? AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VN1210ND	文件：140.31 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSPowerFETs??? ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.	SUTEX Supertex, Inc	SUTEX

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
貿(mào)澤芯城（深圳）電子科技有限公司	URF1215	統(tǒng)懋半導(dǎo)體	23+	ITO-220AB	11200	原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO	詢(xún)價(jià)
深圳市科恒偉業(yè)電子有限公司	URF1220	MOSPEC	1926+	TO-220F	6852	只做原裝正品現(xiàn)貨!或訂貨假一賠十!	詢(xún)價(jià)
深圳市安富世紀(jì)電子有限公司	URF1220	URF1220	23+	TO-220F	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢(xún)價(jià)
深圳市河鋒鑫科技有限公司	URF19530G	IR	22+		6000	終端可免費(fèi)供樣,支持BOM配單	詢(xún)價(jià)
深圳市星辰微電科技有限公司	URF1D_FB-400W(H)R3	MORNSUN金升陽(yáng)	24+	DIP	12500	金升陽(yáng)電源模塊全系列在售	詢(xún)價(jià)

更多URF1210C供應(yīng)商更新時(shí)間2025-1-7 15:47:00

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