UT8R128K3215WCX中文資料AEROFLEX數(shù)據(jù)手冊PDF規(guī)格書

INTRODUCTION

The UT8R128K32 is a high-performance CMOS static RAM organized as 131,072 words by 32 bits. Easy memory expansion is provided by active LOW and HIGH chip enables (E1, E2), an active LOW output enable (G), and three-state drivers. This device has a power-down feature that reduces power consumption by more than 90 when deselected.

FEATURES

15ns maximum access time

Asynchronous operation, functionally compatible with industry-standard 128K x 32 SRAMs

CMOS compatible inputs and output levels, three-state bidirectional data bus

- I/O Voltage 3.3 volts, 1.8 volt core

Radiation performance

- Total-dose: 300 Krad(Si)

- SEL Immune: >100 MeV-cm2/mg

- LETth (0.25): 53.0 MeV-cm2/mg

- Memory Cell Saturated Cross Section: 1.67E-7cm2/bit

- Neutron Fluence: 3.0E14n/cm2

- Dose Rate

- Upset 1.0E9 rad(Si)/sec

- Latchup >1.0E11 rad(Si)/sec

Packaging options:

- 68-lead ceramic quad flatpack (9.204 grams with leadframe

Standard Microcircuit Drawing 5962-03236

- QML compliant part