零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelMOSFET 600VN-ChannelMOSFET Features □LowIntrinsicCapacitances □ExcellentSwitchingCharacteristics □ExtendedSafeOperatingArea □UnrivalledGateCharge:8.5nC(Typ.) □BVDSS=600V,ID=2A □LowerRDS(on):5?(Max)@VG=10V □100AvalancheTested | WISDOM Wisdom technologies Int`l | WISDOM | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
600VN-ChannelMOSFET | WISDOM Wisdom technologies Int`l | WISDOM | ||
SiliconN-ChannelMOSFET GeneralDescription ThisPowerMOSFETisproducedusingWinsemi’sadvancedplanarstripe,VDMOStechnology.Thislatesttechnologyhasbeenespeciallydesignedtominimizeon-stateresistance,haveahighruggedavalanchecharacteristics.Thisdevicesisspeciallywellsuitedforhighefficien | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
N-ChannelMOSFET Features □LowIntrinsicCapacitances □ExcellentSwitchingCharacteristics □ExtendedSafeOperatingArea □UnrivalledGateCharge:Qg=8.5nC(Typ.) □BVDSS=600V,ID=2A □RDS(on):5?(Max)@VG=10V □100AvalancheTested | WISDOM Wisdom technologies Int`l | WISDOM | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
600VN-ChannelMOSFET | WISDOM Wisdom technologies Int`l | WISDOM | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
N-ChannelMOSFET 600VN-ChannelMOSFET Features □LowIntrinsicCapacitances □ExcellentSwitchingCharacteristics □ExtendedSafeOperatingArea □UnrivalledGateCharge:8.5nC(Typ.) □BVDSS=600V,ID=2A □LowerRDS(on):5?(Max)@VG=10V □100AvalancheTested | WISDOM Wisdom technologies Int`l | WISDOM | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
600VN-ChannelMOSFET | WISDOM Wisdom technologies Int`l | WISDOM | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
N-ChannelEnhancementModeMosfet | YANGJIEYangzhou yangjie electronic co., ltd 揚州揚杰電子揚州揚杰電子科技股份有限公司 | YANGJIE | ||
N-ChannelEnhancementModeMosfet | YANGJIEYangzhou yangjie electronic co., ltd 揚州揚杰電子揚州揚杰電子科技股份有限公司 | YANGJIE |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
UTC |
2019 |
TO-252 |
19700 |
INFINEON品牌專業(yè)原裝優(yōu)質 |
詢價 | ||
UTC/友順 |
2410+ |
TO-220 |
16800 |
原裝正品.假一賠百.正規(guī)渠道.原廠追溯. |
詢價 | ||
UTC |
12+ |
TO-251 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應。 |
詢價 | ||
UTC |
23+ |
TO-220 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
UTC |
2020+ |
TO-251 |
350000 |
100%進口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
UTC |
22+23+ |
TO-220 |
25262 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
UTC |
18+ |
TO-252 |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
UTC/友順 |
21+ |
TO-251 |
30000 |
只做正品原裝現(xiàn)貨 |
詢價 | ||
UTC/友順 |
23+ |
TO-252 |
10000 |
公司只做原裝正品 |
詢價 | ||
UTC/友順 |
22+ |
TO-252 |
6000 |
十年配單,只做原裝 |
詢價 |
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