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V20150C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220ABa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20150C-E3

Trench MOS Schottky technology

UltraLowVF=0.59VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20150C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20150C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

UltraLowVF=0.59VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordanc

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20150C-E3_V01

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220ABa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20150C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20150C-E3_15

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20150C-E3/4W

包裝：盒 封裝/外殼：TO-220-3 類(lèi)別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY SCHOTTKY 150V TO220

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VB20150C-E3

TrenchMOSSchottkytechnology

UltraLowVF=0.59VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20150C-E3

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220ABa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20150C-E3

TrenchMOSSchottkytechnology

UltraLowVF=0.59VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20150C-E3

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220ABa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20150C-E3

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220ABa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20150C-E3

TrenchMOSSchottkytechnology

UltraLowVF=0.59VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    V20150C-E3

  • 功能描述：

    肖特基二極管與整流器 20 Amp 150 Volt Dual TrenchMOS

  • RoHS：

    否

  • 制造商：

    Skyworks Solutions, Inc.

  • 產(chǎn)品：

    Schottky Diodes

  • 峰值反向電壓：

    2 V

  • 正向連續(xù)電流：

    50 mA

  • 配置：

    Crossover Quad

  • 正向電壓下降：

    370 mV

  • 最大功率耗散：

    75 mW

  • 工作溫度范圍：

    - 65 C to + 150 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    SOT-143

  • 封裝：

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VISHAY
2020+
TO-220
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢(xún)價(jià)
VISHAY
21+
TO-220
855
原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
VIS
23+
TO-220AB
10000
公司只做原裝正品
 詢(xún)價(jià)
VISHAY/威世
2022+
TO-220
840
原廠(chǎng)代理 終端免費(fèi)提供樣品
 詢(xún)價(jià)
VIS
23+
TO-220AB
6000
原裝正品，支持實(shí)單
 詢(xún)價(jià)
VISHAY
TO-220
396379
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢(xún)價(jià)
VISHAY/威世
23+
NA/
4090
原廠(chǎng)直銷(xiāo),現(xiàn)貨供應(yīng),賬期支持!
 詢(xún)價(jià)
VISHAY/威世
22+
TO220
12000
只做原裝、原廠(chǎng)優(yōu)勢(shì)渠道、假一賠十
 詢(xún)價(jià)
VISHAY/威世
20+
TO-220
840
現(xiàn)貨很近!原廠(chǎng)很遠(yuǎn)!只做原裝
 詢(xún)價(jià)
VISHAY/威世
24+
TO220
990000
明嘉萊只做原裝正品現(xiàn)貨
 詢(xún)價(jià)
更多V20150C-E3供應(yīng)商 更新時(shí)間2024-12-29 11:12:00

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