V29LC51001中文資料茂矽電子數(shù)據(jù)手冊PDF規(guī)格書

Description

The V29LC51001 is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention.

The V29LC51001 features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase.

Features

■ 128Kx8-bit Organization

■ Address Access Time: 90 ns

■ Single 5V ± 10 Power Supply

■ Sector Erase Mode Operation

■ 512 bytes per Sector, 256 Sectors

– Sector-Erase Cycle Time: 10ms (Max)

– Byte-Program Cycle Time: 30μs (Max)

■ Minimum 1,000 Erase-Program Cycles

■ Low power dissipation

– Active Read Current: 20mA (Typ)

– Active Program Current: 30mA (Typ)

– Standby Current: 100μA (Max)

■ Low VCC Program Inhibit Below 3.2V

■ Self-timed program/erase operations

■ CMOS and TTL Interface

■ Packages:

– 32-pin Plastic DIP

– 32-pin PLCC