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V30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified

VishayVishay Siliconix

威世科技威世科技半導體

V30120C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半導體

V30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

V30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

V30120C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

V30120C_V01

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半導體

V30120C-E3

Trench MOS Schottky technology

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263AB

VishayVishay Siliconix

威世科技威世科技半導體

V30120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified

VishayVishay Siliconix

威世科技威世科技半導體

V30120C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified

VishayVishay Siliconix

威世科技威世科技半導體

V30120CI-M3SLASHP

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A

?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    V30120C

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

供應商型號品牌批號封裝庫存備注價格
VISHAY
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
VISHAY
23+
TO-220
8600
全新原裝現(xiàn)貨
 詢價
VISHAY
1822+
TO-220
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
VISHAY
18+
TO-220
41200
原裝正品,現(xiàn)貨特價
 詢價
VISHAY
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
VISHAY
21+
TO-220
3145
原裝現(xiàn)貨假一賠十
 詢價
VISHAY/威世
23+
TO-220
10000
公司只做原裝正品
 詢價
VISHAY/威世
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY/威世
2022+
TO-220
12888
原廠代理 終端免費提供樣品
 詢價
VISHAY/威世
23+
TO-220
6000
原裝正品，支持實單
 詢價
更多V30120C供應商 更新時間2025-2-22 13:28:00

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