V53C8126H50中文資料茂矽電子數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description

The V53C8126H is a high speed 131,072 x 8 bit CMOS dynamic random access memory. The V53C8126H offers a combination of features: Fast Page Mode for high data bandwidth, fast usable speed, CMOS standby current.

All inputs and outputs are TTL compatible. Input and output capacitances are significantly lowered to allow increased system performance. Fast Page Mode operation allows random access of up to 256 columns (x8) bits within a row with cycle times as short as 21 ns. Because of static circuitry, the CAS clock is not in the critical timing path. The flow through column address latches allow address pipelining while relaxing many critical system timing requirements for fast usable speed. These features make the V53C8126H ideally suited for graphics, digital signal processing and high performance peripherals.

Features

■ 128K x 8-bit organization

■ RAS access time: 35, 40, 45, 50 ns

■ Fast Page Mode supports sustained I/O data rates up to 40 MHz

■ Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh capability

■ Refresh Interval

? V53C8126H – 512 cycles/8 ms

■ Available in 26/24 pin 300 mil SOJ and 28 pin TSOP package