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VB10150C

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150C

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150C-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150C-E3/8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150C-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150C-E3SLASH8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150C-M3

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150C-M3_V01

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150C-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細參數(shù)

  • 型號：

    VB10150C

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY/威世
1926+
TO-263
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
GSC
1535+
450
詢價
GENERAL SEMICONDUCTOR
2023+
SMD
5044
安羅世紀電子只做原裝正品貨
 詢價
GSC
23+
450
全新原裝，歡迎來電咨詢
 詢價
vishay原裝
22+23+
TO-263
22692
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
vishay原裝
24+
TO-263
9860
一級代理
 詢價
VISHAY
2020+
TO-263
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
VISHAY/威世
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價
VISHAY/威世
2447
TO-263
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
VISHAY
21+
TO-263AB
10000
原裝現(xiàn)貨假一賠十
 詢價
更多VB10150C供應(yīng)商 更新時間2025-2-25 17:24:00

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