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VBMB165R05S中文資料微碧半導體數(shù)據(jù)手冊PDF規(guī)格書
VBMB165R05S規(guī)格書詳情
FEATURES
? Low Gate Charge Qg Results in Simple Drive
Requirement
? Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
? Fully Characterized Capacitance and Avalanche Voltage
and Current
? Compliant to RoHS directive 2002/95/EC