首頁>VBT1545CBP-E3_V01>規(guī)格書詳情
VBT1545CBP-E3_V01中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書
廠商型號(hào) |
VBT1545CBP-E3_V01 |
功能描述 | Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection |
文件大小 |
102.51 Kbytes |
頁面數(shù)量 |
4 頁 |
生產(chǎn)廠商 | Vishay Siliconix |
企業(yè)簡(jiǎn)稱 |
Vishay【威世科技】 |
中文名稱 | 威世科技半導(dǎo)體官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2024-10-26 10:20:00 |
VBT1545CBP-E3_V01規(guī)格書詳情
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
? TJ 200 °C max. in solar bypass mode application
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: D2PAK (TO-263AB)?
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102?
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
CUI |
24+ |
250 |
詢價(jià) | ||||
CUI |
20+ |
SOPSMD |
52628 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
CUI |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費(fèi)送樣 |
詢價(jià) | ||
CUI |
2021+ |
SOPSMD |
11000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價(jià) | ||
V-INFINITY |
23+ |
SMD8 |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) |