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VBT3060G

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VBT3060G

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VBT3060G-E3

Low forward voltage drop, low power losses

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?NotrecommendedforPCBbottomsidewavemounting ?Solderbathtemperature275°Cmaximum

VishayVishay Siliconix

威世科技威世科技半導體

VBT3060G-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?NotrecommendedforPCBbottomsidewavemounting ?Solderbathtemperature275°Cmaxim

VishayVishay Siliconix

威世科技威世科技半導體

VBT3060G-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VBT3060G-E3/8W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VBT3060G-E3/4W

包裝：管件 封裝/外殼：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 15A 60V TO-263AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VBT3060G-E3/8W

包裝：管件 封裝/外殼：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 15A 60V TO-263AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VCO3060

150-200MHzVCO

DESCRIPTION TheCTSVCO3060isasinglebandhighperformanceSMTVCO.It’slowphasenoisemakesittheidealchoiceforanywirelesstelecommunicationssystem. FEATURES ?IndustryStandard12.7x12.7mmSMTFootprint ?+4.75VdcSupplyVoltage ?-20°Cto+85°CTemp.Range ?LowPhaseNoise ?

CTSCTS Electronic Components

西迪斯西迪斯公司

VCT3060

CeramicTrimmerCapacitors3mmSMDType

VATRONICS

Vatronics Technologies Limited

VFT3060C

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導體

VFT3060C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand

VishayVishay Siliconix

威世科技威世科技半導體

VFT3060C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導體

VFT3060G

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導體

VFT3060G

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導體

VFT3060G

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導體

VFT3060G

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導體

VIT3060C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand

VishayVishay Siliconix

威世科技威世科技半導體

VIT3060C

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導體

VIT3060G

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,per JESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    VBT3060G

  • 制造商：

    Vishay Semiconductors

  • 功能描述：

    30A,60V,DUAL TRENCH SKY RECT.

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY/威世
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價
VISHAY/威世
2021+
TO-263
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
VISHAY
1809+
TO-263
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
Vishay Semiconductor Diodes Di
22+
TO263AB
9000
原廠渠道,現(xiàn)貨配單
 詢價
VISHAY/威世
23+
TO-263AB
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
Vishay Semiconductor Diodes Di
23+
TO263AB
9000
原裝正品，支持實單
 詢價
VISHAY/威世
22+
TO-263
100000
代理渠道/只做原裝/可含稅
 詢價
Vishay Semiconductor Diodes Di
23+
TO263AB
8000
只做原裝現(xiàn)貨
 詢價
Vishay General Semiconductor -
24+
TO-263-3 D?Pak(2 引線 + 接片
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
VIS
23+
TO-263AB
10000
公司只做原裝正品
 詢價
更多VBT3060G供應(yīng)商 更新時間2024-12-24 14:50:00

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