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VF30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

UltraLowVF=0.56VatIF=5A ? FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半導體

VF30150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa

VishayVishay Siliconix

威世科技威世科技半導體

VF30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30150C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

UltraLowVF=0.56VatIF=5A ? FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半導體

VF30150C-M3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導體

VF30150C-M3_V01

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導體

VF30150C_10

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號:

    VF30150C

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

供應商型號品牌批號封裝庫存備注價格
VISHAY
23+
TO-220
8600
全新原裝現(xiàn)貨
詢價
VISHAY
24+
TO-220F
5000
只做原裝公司現(xiàn)貨
詢價
VISHAY
23+
TO220
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
詢價
VISHAY
2020+
TO220
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
VISHAY
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
VISHAY
21+
TO220
19
原裝現(xiàn)貨假一賠十
詢價
MICROCHIP
2021++
DIP
8000
原裝正品價格優(yōu)勢!歡迎詢價QQ:385913858TEL:15
詢價
VISHAY/威世
23+
TO-220
10000
公司只做原裝正品
詢價
VISHAY
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
中性
23+
TO220F-3
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
更多VF30150C供應商 更新時間2025-2-3 14:02:00