VG36646141BT-10中文資料VML數(shù)據(jù)手冊PDF規(guī)格書

Description

The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is packaged in JEDEC standard pinout and standard plastic TSOP package.

Features

? Single 3.3V (±0.3V) power supply

? High speed clock cycle time : 8/10ns

? Fully synchronous with all signals referenced to a positive clock edge

? Programmable CAS Iatency (2,3)

? Programmable burst length (1,2,4,8,&Full page)

? Programmable wrap sequence (Sequential/Interleave)

? Automatic precharge and controlled precharge

? Auto refresh and self refresh modes

? Quad Internal banks controlled by A12 & A13 (Bank select)

? Each Bank can operate simultaneously and independently

? LVTTL compatible I/O interface

? Random column access in every cycle

? X16 organization

? Input/Output controlled by LDQM and UDQM

? 4,096 refresh cycles/64ms

? Burst termination by burst stop and precharge command

? Burst read/single write option