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VI20100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C-E3

Trench MOS Schottky technology

UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmaximum10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C-E3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C-E3/4W

包裝:散裝 封裝/外殼:TO-262-3,長(zhǎng)引線,I2Pak,TO-262AA 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述:DIODE ARRAY SCHOTTKY 100V TO262

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VI20100CHM3/4W

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-262-3,長(zhǎng)引線,I2Pak,TO-262AA 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述:DIODE SCHOTTKY 20A 100V TO-262AA

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VI20100C-M3/4W

包裝:管件 封裝/外殼:TO-262-3,長(zhǎng)引線,I2Pak,TO-262AA 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述:DIODE SCHOTTKY 20A 100V TO-262AA

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

詳細(xì)參數(shù)

  • 型號(hào):

    VI20100C

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VISHAY
23+
TO-262
8600
全新原裝現(xiàn)貨
詢價(jià)
POWER
23+
TO-220
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價(jià)
VISHAY/威世
23+
TO-262
90000
只做原廠渠道價(jià)格優(yōu)勢(shì)可提供技術(shù)支持
詢價(jià)
VISHAY
1735+
TO262AA
6528
科恒偉業(yè)!只做原裝正品!假一賠十!
詢價(jià)
原裝VISHAY
19+
TO-262AA
20000
原裝現(xiàn)貨假一罰十
詢價(jià)
VISHAY
2020+
TO262AA
8000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
原裝VISHAY
21+
TO-262AA
35200
一級(jí)代理/放心采購(gòu)
詢價(jià)
VISHAY/威世
21+
TO262
19000
只做正品原裝現(xiàn)貨
詢價(jià)
VISHAY
21+
TO262AA
100
原裝現(xiàn)貨假一賠十
詢價(jià)
VISHAY
1809+
TO-262
3675
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
詢價(jià)
更多VI20100C供應(yīng)商 更新時(shí)間2024-11-6 14:02:00