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VI30100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半導體

VI30100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VI30100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VI30100C-E3

Trench MOS Schottky technology

UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbatht

VishayVishay Siliconix

威世科技威世科技半導體

VI30100C-E3

Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Lowthermalresistance ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106

VishayVishay Siliconix

威世科技威世科技半導體

VI30100C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半導體

VI30100C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VI30100C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VI30100CHM3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VI30100C-M3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號:

    VI30100C

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

供應商型號品牌批號封裝庫存備注價格
VISHAY
23+
TO-262
8600
全新原裝現(xiàn)貨
詢價
VISHAY
22+23+
TO-262
15506
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
VISHAY原裝
24+
TO-220
9860
一級代理
詢價
VISHAY原
2020+
TO-262
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
VISHAY原裝
21+
TO-262
269
原裝現(xiàn)貨假一賠十
詢價
VISHAY/威世
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
VISHAY/威世
23+
TO-262
20000
原裝正品 歡迎咨詢
詢價
VISHAY原裝
TO-262
396379
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
VISHAY
23+
TO-262
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
詢價
VISHAY/威世
23+
NA/
3519
原廠直銷,現(xiàn)貨供應,賬期支持!
詢價
更多VI30100C供應商 更新時間2025-2-5 9:12:00