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VI30100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100C-E3

Trench MOS Schottky technology

UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbatht

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100C-E3

Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Lowthermalresistance ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100CHM3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100C-M3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100C-E3/4W

包裝：管件 封裝/外殼：TO-262-3，長引線，I2Pak，TO-262AA 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY SCHOTTKY 100V TO262

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VI30100CHM3/4W

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-262-3，長引線，I2Pak，TO-262AA 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 30A 100V TO-262AA

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VI30100C-M3/4W

包裝：卷帶（TR） 封裝/外殼：TO-262-3，長引線，I2Pak，TO-262AA 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 30A 100V TO-262AA

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

詳細(xì)參數(shù)

  • 型號(hào)：

    VI30100C

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
VISHAY
23+
TO-262
8600
全新原裝現(xiàn)貨
 詢價(jià)
VISHAY
22+23+
TO-262
15506
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
VISHAY原裝
19+
TO-220
9860
一級(jí)代理
 詢價(jià)
VISHAY原
2020+
TO-262
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
VISHAY原裝
21+
TO-262
269
原裝現(xiàn)貨假一賠十
 詢價(jià)
VISHAY/威世
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VISHAY/威世
23+
TO-262
20000
原裝正品 歡迎咨詢
 詢價(jià)
VISHAY原裝
TO-262
396379
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價(jià)
VISHAY
23+
TO-262
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
VISHAY/威世
23+
NA/
3519
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價(jià)
更多VI30100C供應(yīng)商 更新時(shí)間2024-12-25 16:02:00

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