首頁 >VIT1060C>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

VIT1060C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT1060C-E3

Trench MOS Schottky technology

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220AB,an

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT1060C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT1060CHM3

Trench MOS Schottky technology

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 T

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT1060CHM3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT1060C-M3

Trench MOS Schottky technology

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 T

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT1060C-M3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT1060C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT1060C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT1060C-E3/4W

Package：TO-262-3，長引線，I2Pak，TO-262AA；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 10A 60V TO-262AA

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

詳細(xì)參數(shù)

  • 型號：

    VIT1060C

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY/威世
23+
TO262
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
VISHAY
1809+
TO-262
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
Vishay Semiconductor Diodes Di
22+
TO262AA
9000
原廠渠道,現(xiàn)貨配單
 詢價
Vishay Semiconductor Diodes Di
23+
TO262AA
9000
原裝正品，支持實單
 詢價
Vishay General Semiconductor -
24+
TO-262-3 長引線 I?Pak TO-26
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
24+
N/A
69000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
更多VIT1060C供應(yīng)商 更新時間2025-2-25 11:10:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多