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VIT3060G

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,per JESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3060G

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?NotrecommendedforPCBbottomsidewavemounting ?Solderbathtemperature275°Cmaximum

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3060G

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3060G

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3060G-E3

Low forward voltage drop, low power losses

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?NotrecommendedforPCBbottomsidewavemounting ?Solderbathtemperature275°Cmaximum

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3060G-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?NotrecommendedforPCBbottomsidewavemounting ?Solderbathtemperature275°Cmaxim

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3060GHM3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?NotrecommendedforPCBbottomsidewavemounting ?Solderbathtemperature275°Cmaximum

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3060G-M3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?NotrecommendedforPCBbottomsidewavemounting ?Solderbathtemperature275°Cmaximum

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3060G-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VIT3060G-E3/4W

包裝：卷帶（TR） 封裝/外殼：TO-262-3，長(zhǎng)引線，I2Pak，TO-262AA 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 60V 15A TO262AA

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VIT3060GHM3/4W

包裝：卷帶（TR） 封裝/外殼：TO-262-3，長(zhǎng)引線，I2Pak，TO-262AA 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 60V 15A TO262AA

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VIT3060G-M3/4W

包裝：卷帶（TR） 封裝/外殼：TO-262-3，長(zhǎng)引線，I2Pak，TO-262AA 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 60V 15A TO262AA

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

詳細(xì)參數(shù)

  • 型號(hào)：

    VIT3060G

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VISHAY/威世
23+
TO262
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
 詢價(jià)
VISHAY
1809+
TO-262
3675
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
Vishay General Semiconductor -
24+
TO-262AA
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
Vishay Semiconductor Diodes Di
22+
TO262AA
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Vishay Semiconductor Diodes Di
23+
TO262AA
9000
原裝正品，支持實(shí)單
 詢價(jià)
更多VIT3060G供應(yīng)商 更新時(shí)間2025-1-11 11:09:00

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