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VN2106中文資料SUTEX數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

VN2106
廠商型號(hào)

VN2106

功能描述

N-Channel Enhancement-Mode Vertical DMOS FETs

文件大小

457.83 Kbytes

頁(yè)面數(shù)量

4 頁(yè)

生產(chǎn)廠商 Supertex, Inc
企業(yè)簡(jiǎn)稱(chēng)

SUTEX

中文名稱(chēng)

Supertex, Inc官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-29 15:38:00

VN2106規(guī)格書(shū)詳情

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Features

? Commercial and Military versions available

? Free from secondary breakdown

? Low power drive requirement

? Ease of paralleling

? Low CISS and fast switching speeds

? High input impedance and high gain

Applications

? Motor controls

? Amplifiers

? Power supply circuits

? Converters

? Switches

? Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

產(chǎn)品屬性

  • 型號(hào):

    VN2106

  • 制造商:

    SUPERTEX

  • 制造商全稱(chēng):

    SUPERTEX

  • 功能描述:

    N-Channel Enhancement-Mode Vertical DMOS FETs

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