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VN3

Max. load 3,000N (push/pull)

GeneralFeatures Max.load3,000N(push/pull) Max.speedatmax.load3.5mm/s Max.speedatnoload6.8mm/s Retractedlength≥Stroke+248mm IPratingIP66 Stroke20~500mm OutputsignalsHallsensors OptionsSafetynut Voltage12/24VDC;12/24VDC(thermalswitch) Operationaltemperatur

TIMOTION

TiMOTION Technology Co. Ltd.

VN3

包裝：散裝 類別：傳感器，變送器 浮子，液位傳感器 描述：LVL SEN COND 3 PROBE NYLON

Carlo Gavazzi Inc.

Carlo Gavazzi Inc.

Carlo Gavazzi Inc.

VN30N

HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION TheVN30NisamonolithicdevicemadeusingSGS-THOMSONVerticalIntelligentPowerTechnology,intendedfordrivingresistiveorinductiveloadswithonesidegrounded. Built-inthermalshut-downprotectsthechipfromovertemperatureandshortcircuit. Theinputcontrolis5Vlogi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VN30N011Y

HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION TheVN30NisamonolithicdevicemadeusingSGS-THOMSONVerticalIntelligentPowerTechnology,intendedfordrivingresistiveorinductiveloadswithonesidegrounded. Built-inthermalshut-downprotectsthechipfromovertemperatureandshortcircuit. Theinputcontrolis5Vlogi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VN30N012Y

HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION TheVN30NisamonolithicdevicemadeusingSGS-THOMSONVerticalIntelligentPowerTechnology,intendedfordrivingresistiveorinductiveloadswithonesidegrounded. Built-inthermalshut-downprotectsthechipfromovertemperatureandshortcircuit. Theinputcontrolis5Vlogi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VN30NSP

HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION TheVN30NSPisamonolithicdevicesmadeusingSTMicroelectronicsVIPowerTechnology,intendedfordrivingresistiveorinductiveloadswithonesidegrounded. Built-inthermalshut-downprotectsthechipfromovertemperatureandshortcircuit. Theinputcontrolis5Vlogiclevelc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VN31

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

■MAXIMUMCONTINUOUSOUTPUT CURRENT(note2):31A@Tc=85°C ■5VLOGICLEVELCOMPATIBLEINPUT ■THERMALSHUT-DOWN ■UNDERVOLTAGEPROTECTION ■OPENDRAINDIAGNOSTICOUTPUT ■INDUCTIVELOADFASTDEMAGNETIZATION ■VERYLOWSTAND-BYPOWERDISSIPATION DESCRIPTION TheVN31isamonolithic

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VN31-E

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

■MAXIMUMCONTINUOUSOUTPUT CURRENT(note2):31A@Tc=85°C ■5VLOGICLEVELCOMPATIBLEINPUT ■THERMALSHUT-DOWN ■UNDERVOLTAGEPROTECTION ■OPENDRAINDIAGNOSTICOUTPUT ■INDUCTIVELOADFASTDEMAGNETIZATION ■VERYLOWSTAND-BYPOWERDISSIPATION DESCRIPTION TheVN31isamonolithic

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VN3205

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN3205

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN3205

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN3205N3

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN3205N3-G

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN3205N3-GP002

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN3205N3-GP003

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN3205N3-GP005

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN3205N3-GP013

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN3205N3-GP014

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN3205N6

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN3205N8

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

晶體管資料

  • 型號：

    VN35AJ

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-NPN

  • 性質(zhì)：

  • 封裝形式：

  • 極限工作電壓：

  • 最大電流允許值：

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

  • 可代換的型號：

    3DK205,

  • 最大耗散功率：

    25W

  • 放大倍數(shù)：

  • 圖片代號：

    NO

  • vtest：

    0

  • htest：

    999900

  • atest：

    0

  • wtest：

    25

產(chǎn)品屬性

  • 產(chǎn)品編號：

    VN3

  • 制造商：

    Carlo Gavazzi Inc.

  • 類別：

    傳感器，變送器 > 浮子，液位傳感器

  • 系列：

    VN

  • 包裝：

    散裝

  • 類型：

    液體

  • 輸出類型：

    繼電器

  • 安裝類型：

    有螺紋

  • 材料 - 殼體和棱柱：

    尼龍

  • 工作溫度：

    0°C ~ 90°C

  • 描述：

    LVL SEN COND 3 PROBE NYLON

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
SOT5
3629
原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!
 詢價
ST
23+
SMD鐵
7100
絕對全新原裝!現(xiàn)貨!特價!請放心訂購!
 詢價
ST
22+
SOP
320
長期原裝現(xiàn)貨,特價供應(yīng)!
 詢價
STM
14+
POWERSO-10
1200
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
SIL
05+
原廠原裝
2051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價
ST
10+
TO220-5
7800
全新原裝正品,現(xiàn)貨銷售
 詢價
ST
23+
BGA
20000
原廠授權(quán)代理分銷現(xiàn)貨只做原裝正邁科技樣品支持現(xiàn)貨
 詢價
ST
23+
HSOP10
8000
原裝正品,假一罰十
 詢價
ST
23+
SOP10
8795
詢價
TI
2020+
2500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
更多VN3供應(yīng)商 更新時間2024-12-23 16:41:00

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