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VNV35NV04

OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION TheVNB35NV04,VNP35NV04,VNV35NV04,VNW35NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETSfromDCupto25KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNV35NV04

FULLY AUTOPROTECTED POWER MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNV35NV04

包裝:管件 封裝/外殼:PowerSO-10 裸露底部焊盤 類別:集成電路(IC) 配電開關(guān),負(fù)載驅(qū)動器 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNV35NV04-E

OMNIFET II: fully autoprotected Power MOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics?VIPower?M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNV35NV04TR-E

OMNIFET II: fully autoprotected Power MOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics?VIPower?M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNV35NV04-E

包裝:卷帶(TR) 封裝/外殼:PowerSO-10 裸露底部焊盤 類別:集成電路(IC) 配電開關(guān),負(fù)載驅(qū)動器 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNV35NV04TR-E

包裝:卷帶(TR) 封裝/外殼:PowerSO-10 裸露底部焊盤 類別:集成電路(IC) 配電開關(guān),負(fù)載驅(qū)動器 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNB35NV04

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNB35NV04

OMNIFETIIFULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNB35NV04,VNP35NV04,VNV35NV04,VNW35NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETSfromDCupto25KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNB35NV04-E

OMNIFETII:fullyautoprotectedPowerMOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics?VIPower?M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNB35NV04TR-E

OMNIFETII:fullyautoprotectedPowerMOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics?VIPower?M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNB35NV04TR-E

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics?VIPower?M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNP35NV04

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNP35NV04

OMNIFETIIFULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNB35NV04,VNP35NV04,VNV35NV04,VNW35NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETSfromDCupto25KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNP35NV04-E

OMNIFETII:fullyautoprotectedPowerMOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics?VIPower?M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNP35NV04-E

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNW35NV04

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

VNW35NV04

OMNIFETIIFULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNB35NV04,VNP35NV04,VNV35NV04,VNW35NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETSfromDCupto25KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

產(chǎn)品屬性

  • 產(chǎn)品編號:

    VNV35NV04

  • 制造商:

    STMicroelectronics

  • 類別:

    集成電路(IC) > 配電開關(guān),負(fù)載驅(qū)動器

  • 系列:

    OMNIFET II?, VIPower?

  • 包裝:

    管件

  • 開關(guān)類型:

    通用

  • 輸出數(shù):

    1

  • 比率 - 輸入:

    1:1

  • 輸出配置:

    低端

  • 輸出類型:

    N 通道

  • 接口:

    開/關(guān)

  • 電壓 - 負(fù)載:

    36V(最大)

  • 電壓 - 供電 (Vcc/Vdd):

    不需要

  • 電流 - 輸出(最大值):

    30A

  • 導(dǎo)通電阻(典型值):

    10 毫歐(最大)

  • 輸入類型:

    非反相

  • 故障保護:

    限流(固定),超溫,過壓

  • 工作溫度:

    -40°C ~ 150°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 供應(yīng)商器件封裝:

    10-PowerSO

  • 封裝/外殼:

    PowerSO-10 裸露底部焊盤

  • 描述:

    IC PWR DRIVER N-CHAN 1

供應(yīng)商型號品牌批號封裝庫存備注價格
STM
24+
200
詢價
ST
23+
SOP10
7750
全新原裝優(yōu)勢
詢價
ST
23+
原廠封裝
13528
振宏微原裝正品,假一罰百
詢價
STMicroelectronics
23+
10-PowerSO
66800
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源!
詢價
ST
20+
na
65790
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
STM
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
STMicroelectronics
24+
10-PowerSO
36500
一級代理/放心采購
詢價
STM
24+
原廠封裝
7510
原裝現(xiàn)貨
詢價
STM
20+
SOP-10
1001
就找我吧!--邀您體驗愉快問購元件!
詢價
意法半導(dǎo)體
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
詢價
更多VNV35NV04供應(yīng)商 更新時間2025-1-12 16:00:00