VOM618A_V01中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The 110 °C rated VOM618A has a GaAs infrared emitting

diode emitter, which is optically coupled to a silicon planar

phototransistor detector, and is incorporated in a 4 pin

100 mil lead pitch miniflat package. It features a high current

transfer ratio with low input current, low coupling

capacitance, and high isolation voltage.

These coupling devices are designed for signal transmission

between two electrically separated circuits.

FEATURES

? Operating temperature from - 55 °C to + 110 °C

? SOP-4 mini-flat package

? CTR range 40 to 600 , IF = 1 mA

? Isolation test voltage, 3750 VRMS

? Low saturation voltage

? Fast switching times

? Low coupling capacitance

? End-stackable, 0.100 (2.54 mm) spacing

? Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

? PLCs

? Telecommunication

? Lighting control system

? Solar inverters

? AC drives

AGENCY APPROVALS

(All parts are certified under base model VOM618A)

? UL1577, file no. E52744

? cUL tested to CSA 22.2 bulletin 5A

? DIN EN 60747-5-5 (VDE 0884-5), available with option 1

? FIMKO EN 60065 and EN 60950-1

? CQC: GB8898-2011, GB4943.1-2011